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Visible Light Characterization of Sillicon on Insulator Materials
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Photoluminescence Study of Transition Metal-Shallow Impurity Complexes in Semiconductors
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The Origin of the M-Centre in Zinc Selenide
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Quantitative Interpretation of the Band Edge Luminescence in Degenarately Doped N-GaAs
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 65Photoluminescence Study of Transition...

Photoluminescence Study of Transition Metal-Shallow Impurity Complexes in Semiconductors

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Optical Characterization of Semiconductors

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Periodical:

Key Engineering Materials (Volume 65)

Pages:

141-144

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.65.141

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January 1992

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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