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Paper Titles
Photoluminescence Study of Transition Metal-Shallow Impurity Complexes in Semiconductors
p.141
The Origin of the M-Centre in Zinc Selenide
p.145
Quantitative Interpretation of the Band Edge Luminescence in Degenarately Doped N-GaAs
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Lattice Relaxation Effect on Bound Exciton in Ga1-XInXP:N
p.159
Optical Absorption Cross-Section of Sb in Ge
p.167
Photoluminescence Evaluation of n-Type GaAs LPTT Layers Grown from a Bi-Solution
p.171
Photoreflectance Characterization of the Internal Electric Fields across the N-Type GaAs/Al0.3Ga0.7As Heterojunctions in MBE Grown Material
p.177
Comparison of Far Infrared and Raman Spectroscopy for Studying Phonon Confinement in Superlattices
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Far Infrared Attenuatted Total Reflection Spectroscopy for Studying Superlattice Structures
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Optical Absorption Cross-Section of Sb in Ge

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Periodical:

Key Engineering Materials (Volume 65)

Pages:

167-170

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.65.167

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January 1992

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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