For Libraries For Publication Open Access Downloads About Us Contact Us
Paper Titles
Magnetooptical Spectroscopy of Layer Dilute Magnetic Semiconductors
p.125
Visible Light Characterization of Sillicon on Insulator Materials
p.133
Photoluminescence Study of Transition Metal-Shallow Impurity Complexes in Semiconductors
p.141
The Origin of the M-Centre in Zinc Selenide
p.145
Quantitative Interpretation of the Band Edge Luminescence in Degenarately Doped N-GaAs
p.151
Lattice Relaxation Effect on Bound Exciton in Ga1-XInXP:N
p.159
Optical Absorption Cross-Section of Sb in Ge
p.167
Photoluminescence Evaluation of n-Type GaAs LPTT Layers Grown from a Bi-Solution
p.171
Photoreflectance Characterization of the Internal Electric Fields across the N-Type GaAs/Al0.3Ga0.7As Heterojunctions in MBE Grown Material
p.177

Quantitative Interpretation of the Band Edge Luminescence in Degenarately Doped N-GaAs

Article Preview

Abstract:

You might also be interested in these eBooks
Optical Characterization of Semiconductors View Preview

Info:

Periodical:

Key Engineering Materials (Volume 65)

Pages:

151-158

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.65.151

Citation:

Cite this paper

Online since:

January 1992

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1992 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

This article has no references.

© 2025 Trans Tech Publications Ltd. All rights are reserved, including those for text and data mining, AI training, and similar technologies. For open access content, terms of the Creative Commons licensing CC-BY are applied.
Scientific.Net is a registered trademark of Trans Tech Publications Ltd.