Paper Titles

Optical Effects in Thin Layers
p.117

Magnetooptical Spectroscopy of Layer Dilute Magnetic Semiconductors
p.125

Visible Light Characterization of Sillicon on Insulator Materials
p.133

Photoluminescence Study of Transition Metal-Shallow Impurity Complexes in Semiconductors
p.141

The Origin of the M-Centre in Zinc Selenide
p.145

Quantitative Interpretation of the Band Edge Luminescence in Degenarately Doped N-GaAs
p.151

Lattice Relaxation Effect on Bound Exciton in Ga_1-XIn_XP:N
p.159

Optical Absorption Cross-Section of Sb in Ge
p.167

Photoluminescence Evaluation of n-Type GaAs LPTT Layers Grown from a Bi-Solution
p.171

HomeKey Engineering MaterialsKey Engineering Materials Vol. 65The Origin of the M-Centre in Zinc Selenide

The Origin of the M-Centre in Zinc Selenide

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Optical Characterization of Semiconductors

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Periodical:

Key Engineering Materials (Volume 65)

Pages:

145-150

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.65.145

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January 1992

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© 1992 Trans Tech Publications Ltd. All Rights Reserved

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