Thin-Film Growth Rate Monitor by Normal-Incidence Reflectance

Fu Rong Huang; Xu Dong Chen; Chun Cheng Wang; Ju Yi Lee

doi:10.4028/www.scientific.net/KEM.656-657.107

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HomeKey Engineering MaterialsKey Engineering Materials Vols. 656-657Thin-Film Growth Rate Monitor by Normal-Incidence...

Thin-Film Growth Rate Monitor by Normal-Incidence Reflectance

Abstract:

An in situ technique for monitoring the growth rate and optical constants of the thin semiconductor layer by the normal-incidence reflectance is proposed. To demonstrate the feasibility of the proposed method, the variation of the air gap between two glasses is used to simulate growth system. We also used the spin coater to thin the thickness of the salad oil to test the performance of the measurement system. The experiments indicate that we can determine the thickness variation and optical constants of the test sample in real time.

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Periodical:

Key Engineering Materials (Volumes 656-657)

Pages:

107-112

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.656-657.107

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Online since:

July 2015

Authors:

Fu Rong Huang, Xu Dong Chen, Chun Cheng Wang, Ju Yi Lee*

Keywords:

Growth Rate, MOCVD, Reflectance, Thin Film

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