Influence of Substrate Temperature on Microstructure and Properties of Ti-Si-C Film

Abstract:

Ti-Si-C films were prepared on cemented carbide by chemical vapor deposition. The reactive gas system was CH₄, (CH₃)₄Si, TiCl₄ and H₂. The film was analyzed and tested by SEM, AFM, EDS, XPS, microhardness tester, friction and wear tester. The results indicate that the film is continuous and dense. At higher substrate temperature, the hardness of the film will be higher. When the substrate temperature is 850°C, the adhesion of the film is highest with coefficient of friction only 0.14.

• Periodical: Key Engineering Materials (Volume 693)
• Pages: 813-820
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.693.813
• Online since: May 2016
• Authors: Sen Liu*, Wen Zhuang Lu, Yao Guang Chen, Dun Wen Zuo
• Keywords: Friction Performance, Substrate Temperature, Ti-Si-C

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