The Electrical Properties of Epitaxial Grown Sc-Doped (Na0.85K0.15)0.5Bi0.5TiO3 Thin Film Prepared by Sol-Gel Method

Yun Yi Wu; Xiao Hui Wang; Cai Fu Zhong; Long Tu Li

doi:10.4028/www.scientific.net/KEM.697.235

Paper Titles

Preparation and Characterization of Bi₂Ti₂O₇ Microwave Dielectric Ceramics by Citrate Sol-Gel Method
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Evidence of Normal to Anti Ferroelectric Phase Transition of PLZT Transparent Ceramics of Different Zr/Ti Ratio
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Using Ferroelectric Thin Film as the Dielectric for Electrowetting-on-Dielectric
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Dielectric Breakdown and Failure of Ferroelectric Films as the Dielectric for Electrowetting Systems
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The Electrical Properties of Epitaxial Grown Sc-Doped (Na_0.₈₅K_0.15)_0.5Bi_0.5TiO₃ Thin Film Prepared by Sol-Gel Method
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Influence of (Bi_0.5M_0.5)TiO₃ (M=Li, Na, K, Rb) Addition on the Curie Temperature and PTC Effect of BaTiO₃-Based Ceramics
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Effect of Defect Characteristics on the Color of BaTiO₃-Based PTC Ceramic
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Electrode Interface Polarization in BaTiO₃-Based PTC Ceramics
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Densification Behavior and Dielectric Properties of CaO-B₂O₃-SiO₂ System Glass-Ceramics Containing ZrO₂
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The Electrical Properties of Epitaxial Grown Sc-Doped (Na_0.₈₅K_0.15)_0.5Bi_0.5TiO₃ Thin Film Prepared by Sol-Gel Method

Abstract:

Sc-doped (Na_0.₈₅K_0.15)_0.5Bi_0.5TiO₃ (NKBT-Sc) thin film was deposited on electrical conductive Nb-doped SrTiO₃ [100] (Nb:STO) single crystal substrate via an aqueous sol–gel method. Structure analysis by x-ray diffraction and high resolution transmission electron microscopy proves the epitaxial growth relationship between the NKBT-Sc thin film and Nb:STO substrate. Well saturated ferroelectric hysteresis loops with remnant polarization of 26.14 μC/cm² and typical butterfly shape displacement–voltage loop with effective piezoelectric coefficient d₃₃* of 92 pm/V were observed, which were much higher than the NKBT-Sc thin film deposited on platinized silicon substrate. The precision LCR Meter exhibits a butterfly shape of dielectric constant and electric field curve, which is typical nature for the ferroelectric characteristics of the [001]-epitaxial NKBT-Sc thin film.