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HomeKey Engineering MaterialsKey Engineering Materials Vol. 697Improvement of SrAl2O4:Eu2+, Dy3+ Phosphor via AlN...

Improvement of SrAl₂O₄:Eu²⁺, Dy³⁺Phosphor via AlN Incorporation

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Abstract:

SrAl₂O₄:Eu²⁺,Dy³⁺ long-lasting phosphors were incorporated AlN successfully by a conventional solid-state reaction in the reductive atmosphere. When a certain amount of AlN was doped, the specimen SrAl₂O_4-3xN_2x: Eu²⁺, 0.01Dy³⁺ (x = 0.0-0.2) maintained the phase purity. Under the excitation at 398nm, an intense broadband emission centered at 514 nm, originating from the 4f⁶5d¹→4f⁷ transition of Eu²⁺, was observed. It is noteworthy that partial nitridation leads to an enhancement in the emission intensity up to 240%. The study of thermal stability shows that the intensity of SrAl₂O_3.55N_0.3:Eu²⁺,0.01Dy³⁺ phosphor still remains 72% at 150 °C comparing with the initial, while only 62% for the un-doped phosphor. Taking enhanced photoluminescence (PL) property and good thermal stability into account, SrAl₂O_4-3xN_2x:Eu²⁺, 0.01Dy³⁺ is a promising candidate for the phosphors used in alternating current (AC) LEDs.

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High-Performance Ceramics IX

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Periodical:

Key Engineering Materials (Volume 697)

Pages:

71-75

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.697.71

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Online since:

July 2016

Authors:

Chao Quan, You Fu Zhou*, D.C. Huang, Wen Tao Xu

Keywords:

Concentration Quenching, Emission Enhancement, Nitrogen Doping, Photoluminescence

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© 2016 Trans Tech Publications Ltd. All Rights Reserved

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