Characterization of Photoluminescence and Surface Chemistry after Annealing about Si:SiO2 Films Fabricated by Radio Frequency Sputtering

Koichi Tanaka; Taichi Yoshida

doi:10.4028/www.scientific.net/KEM.698.13

Paper Titles

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Characterization of Photoluminescence and Surface Chemistry after Annealing about Si:SiO₂ Films Fabricated by Radio Frequency Sputtering
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Spatial Fluctuation Enhancement in Polymer Capacitors Using Immiscible Binary Mixtures
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Effect of the Introduction of a CF₃ Group to a Silyl-Anchor Azobenzene Dye on Sensitization Property in Dye-Sensitized Solar Cells
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Effect of Embedded TiO₂ in Carbon Nanofiber Support on Pd Catalyst Activity for Formic Acid Oxidation
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 698Characterization of Photoluminescence and Surface...

Characterization of Photoluminescence and Surface Chemistry after Annealing about Si:SiO₂ Films Fabricated by Radio Frequency Sputtering

Abstract:

We fabricated Si:SiO₂ films and assessed its characterization of photoluminescence and surface chemistry. When Si tablets on a SiO₂ target were sputtered in a chamber of a radio frequency sputtering device, Si:SiO₂ films were deposited on a substrate. When the films were excited by a He-Cd laser, photoluminescence having wide and continuous peaks was emitted in shorter region than 600 nm. After annealing, intensity of photoluminescence changed, which depends on annealing temperature and time. By the Fourier Transform InfraRed Spectroscopy, bonds of atoms around Si were investigated.

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Key Engineering Materials (Volume 698)

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13-18

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https://doi.org/10.4028/www.scientific.net/KEM.698.13

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Online since:

July 2016

Authors:

Koichi Tanaka, Taichi Yoshida

Keywords:

FT-IR, Nanocrystallites, Photoluminescence, Si:SiO₂ Films, Silicon

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