Three-Dimensional Simulation of Proposed Ring-Confined-Chalcogenide Phase-Change Memory for Reducing Reset Operation Current

You Yin; Sumio Hosaka

doi:10.4028/www.scientific.net/KEM.698.149

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 698Three-Dimensional Simulation of Proposed...

Three-Dimensional Simulation of Proposed Ring-Confined-Chalcogenide Phase-Change Memory for Reducing Reset Operation Current

Abstract:

In this paper, we proposed a phase-change memory (PCM) structure which has a ring confined chalcogenide (RCC) for reducing reset operation current. The temperature distributions of normal bottom contact (NBC), confined chalcogenide (CC) and proposed RCC PCMs were simulated by 3 dimensional finite element method. It was very clear that a much higher temperature can be obtained for RCC than NBC cell at a certain programming current. The programming characteristics also exhibited that the operation current of RCC cell can be as low as about 45% of NBC cell while that of CC cell was about 82% of CC cell.

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Periodical:

Key Engineering Materials (Volume 698)

Pages:

149-153

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.698.149

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Online since:

July 2016

Authors:

You Yin*, Sumio Hosaka

Keywords:

Low Operation Current, Phase-Change Memory, Three Dimension

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DOI: 10.1039/c1jm14190b

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