The Influence of High-k Material/SiO₂ Gate Stacks on Direct Gate Tunneling Current of Cylindrical Surrounding-Gate MOSFETs

Abstract:

In this paper, we present a model of gate tunneling current in cylindrical surrounding-gate MOSFETs through dual layer high-k dielectric/SiO₂ stacks. The model was derived under a quantum perturbation theory by taking into account both structural and electrical confinement effects. The influences of high-k materials and SiO₂ thickness on the gate tunneling current have been studied. The calculated results show that the HfO₂ is the most effective high-k material to decrease the gate tunneling current. It is also shown that the gate tunneling current is reduced with the SiO₂ thickness. In addition, the obtained tunneling currents are fitted well with those obtained under the self-consistent calculation.

• Periodical: Key Engineering Materials (Volume 709)
• Pages: 19-22
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.709.19
• Online since: September 2016
• Authors: Fatimah A. Noor*, Christoforus Bimo, Khairurrijal Khairurrijal
• Keywords: Cylindrical Surrounding-Gate MOSFETs, Gate Tunneling Current, High-k Dielectric Stack

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