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HomeKey Engineering MaterialsKey Engineering Materials Vol. 727Electroless Deposition of NiMoB Diffusion Barrier...

Electroless Deposition of NiMoB Diffusion Barrier Layer Film for ULSI-Cu Metallization

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Abstract:

NiMoB alloy films were deposited on silicon substrate by electroless deposition for diffusion barrier application in copper interconnects technology. NiMoB(40nm)/SiO₂/Si and NiMoB(20nm)/Cu (40nm)/NiMoB(40nm)/SiO₂/Si samples were prepared and annealed at temperatures ranging from 400^◦C to 600^◦C. Samples were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Four Point Probes (FPP) and Atomic Force Microscopy (AFM) to investigate the phases, composition, sheet resistance and surface morphology. The results showed that electroless deposited NiMoB film can be used as an effective Cu diffusion barrier layer until 500^◦C. And the failure mechanism is that NiMoB crystallized and grains grew after annealing at high temperature, a large number of Cu grains passed through NiMoB film via grain boundaries and then reacted with Si substrate and oxygen, causing the generation of highly resistive Cu₄Si and CuO.

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Periodical:

Key Engineering Materials (Volume 727)

Pages:

900-906

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.727.900

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Online since:

January 2017

Authors:

Yue Chun Wang, Xiu Hua Chen*, Wen Hui Ma, Xue Mei Liu, Yu Ping Li, Ping Bi, Fu Wei Xiang

Keywords:

Diffusion Barrier Layer, Electroless Deposition, Failure Mechanism, NiMoB Film

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© 2017 Trans Tech Publications Ltd. All Rights Reserved

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