Paper Titles

Preparation and Oxidation Properties of Carbon/Carbon Composites with the Antioxidant SiC/NiCS Coating
p.881

Palladium-Silica Organic-Inorganic Membrane Materials via a Sol-Gel Process: Preparation and Properties Calcined under H₂ Atmosphere
p.889

Structure and Properties of Chitosan and Polyvinyl Alcohol Blend Film
p.895

Electroless Deposition of NiMoB Diffusion Barrier Layer Film for ULSI-Cu Metallization
p.900

Plasma-Enhanced Atomic Layer Deposition of GaN Thin Film at Low Temperature
p.907

Effects Studying of Annealing to Mechanical Properties Carbon-Doped Ti-O Films Synthesized Using CO₂ Gas
p.915

Fast Thermal Annealing of CH₃NH₃PbI_3-xCl_x Films for Improving Hybrid Photovoltaics
p.923

Research on the Properties of Sol-Gel Deposited WO₃-NiO Thin Films
p.929

The Effects of the Carrier Concentrations on the Hall Mobilities of ZnO:Al Thin Films Deposited by Magnetron Sputtering
p.938

HomeKey Engineering MaterialsKey Engineering Materials Vol. 727Plasma-Enhanced Atomic Layer Deposition of GaN...

Plasma-Enhanced Atomic Layer Deposition of GaN Thin Film at Low Temperature

Article Preview

Abstract:

Polycrystalline GaN thin films were successfully grown at low temperature (250 °C) by plasma-enhanced atomic layer deposition with NH₃, N₂, N₂/H₂ gas mixture and trimethylgallium (TMG) as precusor. The growth rate, crystal structure, surface composition and the valence state of the corresponding element of the GaN thin films using different nitrogen sources were characterized and examined systematically via the spectroscopic ellipsometry, the x-ray diffractometer, the x-ray photoel-ectron spectrometer. It is showed that all the GaN thin films using different nitrogen sources were polycrystalline structure and the preffered orientation were mainly (100). The films using N₂ and N₂/H₂ gas mixture had a higher crystal quality than films using NH₃. The GPC (growth rate per cycle) would increase with the increase of the N₂ flow rate. The films using a suitable ratio of N₂/H₂ flow rate had not only a high GPC but a good crystal quality. The ratios of Ga/N element of the films using N₂/H₂ gas mixture were approximated to 1:1, it would increase with the ratio of the N₂/H₂ flow rate in the gas mixture, which is showing much effect of the ratios of N₂/H₂ flow rate on the nitrogen content of the thin films.

You might also be interested in these eBooks

Functional Materials Research II

Info:

Periodical:

Key Engineering Materials (Volume 727)

Pages:

907-914

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.727.907

Citation:

Cite this paper

Online since:

January 2017

Authors:

Wen Hui Tang, Yi Jia, Bo Cheng Zhang, Chang Wei Yang, You Zhi Qu, Min Li, Yang Xia

Keywords:

Low Temperature Growth, PE-ALD, Polycrystalline GaN Film

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2017 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] M.A. Khan, J.N. Kuznia, D.T. Olson and R. Kaplan: J. Appl. Phys., Vol. 73 (1993) No. 6, p.3108.

[2] Z.H. Liu: Study on the properites of GaN grown by hydride vapour phase epitaxy (Ph.D., Nanjing University, China 2012), p.5.

[3] H.M. Manasevit, F.M. Erdmann and W.I. Simpson: J. Electrochem. Soc., Vol. 118 (1971) No. 11, p.1864.

[4] J. Chuna, Y.K. Hwang, Y.S. Choib, J.J. Kima, T. Jeongc, J.H. Baekc, H.C. Kob and S.J. Park: Scr. Mater., Vol. 77 (2014) No. 4, p.13.

[5] S. Yoshida, S. Misawa and S. Gonda: Appl. Phys. Lett., Vol. 42 (1983) No. 5, p.427.

[6] T. Hirvikorpi, M. Vähä-Nissi, J. Nikkola, AliHarlin and Maarit- Karppinen: Surf. Coat. Technol., Vol. 205 (2011) No. 21, p.5088.

DOI: 10.1016/j.surfcoat.2011.05.017

[7] Steven M. George: Chem. Rev., Vol. 110 (2010) No. 1, p.111.

[8] Riikka L. Puurunen: J. Appl. Phys., Vol. 97 (2005) No. 12, p.121301.

[9] M. Leskel and M. Ritala: Angew. Chem. Int. Ed., Vol. 42 (2003) No. 45, p.5548.

[10] N.H. Karam, T. Parodos, P. Colter, D. McNulty, W. Rowland, J. Schetzina, N. ElMasry and Salah M. Bedair: Appl. Phys. Lett., Vol. 67 (1995) No. 1, p.94.

DOI: 10.1063/1.115519

[11] C. Ozgit, I. Donmez, M. Alevli and N. Biyikli: J. Vac. Sci. Technol. A, Vol. 30 (2012) No. 1, p. 01A124.

[12] C. Ozgit-Akgun, E. Goldenberg, A.K. Okyay and N. Biyikli: J. Mater. Chem. C, Vol. 12 (2014) No. 12, p.2123.

[13] C. Ozgit, I. Donmez, M. Alevli and N. Biyikli: Thin Solid Films, Vol. 7 (2012) No. 7, p.2750.

DOI: 10.1016/j.tsf.2011.11.081

[14] M. Alevli, C. Ozgit, I. Donmez and N. Biyikli: J. Cryst. Growth, Vol. 1 (2011) No. 1, p.51.

[15] S Bolat, C Ozgit-Akgun, B Tekcan, N Biyikli and AK Okyay: Appl. Phys. Lett., Vol. 24 (2014) No. 24, p.243505.

DOI: 10.1063/1.4884061

[16] C. Ozgit-Akgun, I. Donmez and N. Biyikli: ECS Trans., Vol. 10 (2013) No. 10, p.289.

DOI: 10.1149/05810.0289ecst

[17] E. Goldenberg, C. Ozgit-Akgun, N. Biyikli and A.K. Okyay: J. Vac. Sci. Technol. A, Vol. 3 (2014) No. 3, p.031508.

[18] S.D. Wolter, B.P. Luther, D.L. Waltemyer, C. Onneby and S.E. Mohney: Appl. Phys. Lett., Vol. 70 (1997) No. 16, p.2156.

[19] V. Matolı́n, S. Fabı́k, J. Glosı́k, L. Bideux, Y. Ould-Metidji and B. Gruzza: Vacuum, Vol. 76 (2004) No. 4, p.471.

DOI: 10.1016/j.vacuum.2003.12.163

[20] P. Kumar, M. Kumar, Govind, B.R. Mehta and S.M. Shivaprasad: Appl. Surf. Sci., Vol. 256 (2009) No. 9, p.517.

[21] K. S Butcher, Afifuddin, P. Chen and T.L. Tansley: Phys. Status Solidi C, Vol. 0 (2002) No. 13, p.156.

[22] W. Lambrecht, B. Segall, S. Strite, G. Martin, A. Agarwal, H. Morkoç and A. Rockett: Phys. Rev. B: Condens. Matter Mater. Phys., Vol. 50 (1994) No. 15, p.14155.

DOI: 10.1103/physrevb.50.14155

[23] Z. Majlinger, A. Bozanic, M. Petravic, K.J. Kim, B. Kim and Y.W. Yang: Vacuum, Vol. 84 (2010) No. 1, p.41.

[24] G. Moldovan, I. Harrison, M. Roe and P.D. Brown: Inst. Phys. Conf. Ser., Vol. 179 (2004) No. 16, p.115.