Radio Frequency (RF) Magnetron Sputtered Barium Strontium Titanate (BST) Thin Film

Juan Li; Cong Chun Zhang; Yan Lei Wang; Yang Gao; Xiao Lin Zhao

doi:10.4028/www.scientific.net/KEM.727.942

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 727Radio Frequency (RF) Magnetron Sputtered Barium...

Radio Frequency (RF) Magnetron Sputtered Barium Strontium Titanate (BST) Thin Film

Abstract:

Barium strontium titanate (BST) thin films with excellent dielectric properties are deposited by on-axis RF magnetron sputtering system. The effects of composition of the target and oxygen partial pressure on the microstructure of BST thin film have been investigated. The dielectric properties of the thin films are investigated. The results show that composition of BST thin film deposited with pure argon ambient by the target with 30atm% excess of Ba and Sr is stoichiometric. Perovskite phase can be observed in the thin film annealed in oxygen at 750 °C for 30 min. A metal-insulator-metal (MIM) capacitor is fabricated by microfabrication technique. The capacitance value at 2 GHz is 0.417 pF and 1.42 pF for 50 nm and 90 nm BST thin film respectively, and the leakage current density is 6×10^-6 A/cm²and 5.35×10^-8 A/cm²respectively.

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Periodical:

Key Engineering Materials (Volume 727)

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942-946

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https://doi.org/10.4028/www.scientific.net/KEM.727.942

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Online since:

January 2017

Authors:

Juan Li, Cong Chun Zhang, Yan Lei Wang, Yang Gao, Xiao Lin Zhao

Keywords:

BST, Dielectric Property, RF Magnetron Sputtering, Thin Films

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