Experimental Analysis on Surface Profile of Sapphire Wafer after Polishing by Chemical Mechanical Polishing

Zone Ching Lin; Wei Shuen Huang; Hao Yang Ding

doi:10.4028/www.scientific.net/KEM.749.229

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Experimental Analysis on Surface Profile of Sapphire Wafer after Polishing by Chemical Mechanical Polishing
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HomeKey Engineering MaterialsKey Engineering Materials Vol. 749Experimental Analysis on Surface Profile of...

Experimental Analysis on Surface Profile of Sapphire Wafer after Polishing by Chemical Mechanical Polishing

Abstract:

The study mainly explores the surface profile of sapphire wafer after polishing by the method of chemical mechanical polishing (CMP). Pattern-free polishing slurry with SiO₂ abrasive particle is used to polish the sapphire wafer. This paper observes the phenomena of surface profile and surface scratches of sapphire wafer under different pressures and different rotational velocities during CMP. The study uses atomic force microscope (AFM) to scan the surface of sapphire wafer focusing on three axial lines of 0∘, 45∘and 90∘from the position of near edge passing the center of sapphire wafer. The study also selects five positions on a specific area to draw the surface profiles on the axial lines of 0∘, 45∘and 90∘. It can be observed that the central area of sapphire wafer has lower depression than other areas because the central area is polished more polishing times. Besides, the depression on the central area of sapphire wafer has a greater depression value and it has more and larger surface scratches when it is polished under a greater down force and at a faster rotational velocity.

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Periodical:

Key Engineering Materials (Volume 749)

Pages:

229-233

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.749.229

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Online since:

August 2017

Authors:

Zone Ching Lin*, Wei Shuen Huang, Hao Yang Ding

Keywords:

Chemical Mechanical Polishing, Sapphire Wafer, Surface Profile

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References

[1] A. J. Clark, K. B. Witt and R. L. Rhoades, Oxide removal　rate interactions between slurry, Pad, down force, and Conditioning, Rodel Inc., USA (1986).

Google Scholar

[2] Y. Namba and H. Tsuwa, Ultra-fine finishing of sapphire single crystal, Gen Assem of CIRP, 27th, ManufTechnol., 26 (1- 2) (1977) 325-329.

Google Scholar

[3] Y. Namba and H. Tsuwa, Mechanism and some applications　of ultra-fine finishing, Gen Assem of CIRP, 28th, Manuf Technol., 27 (1) (1978) 511-516.

Google Scholar

[4] H. W. Gutsche and W. M. Jerry, Polishing of sapphire with colloidal silica, Journal of the Electrochemical Society, 125 (1) (1978) 136-138.

DOI: 10.1149/1.2131378

Google Scholar

[5] D. F. Edwards, R. P. Shukla, J. Choi and M. D. Aggarwal,　Precision polishing of bismuth silicate and bismuth germinate, Applied Optics, 33 (34) (1994) 8101-8102.

DOI: 10.1364/ao.33.008101

Google Scholar