Improved Photoelectric Properties of ZnO_1-x/Graphene Heterostructures

Abstract:

In this work, the photoelectric properties of ZnO_1-x/graphene heterostructures were investigated. Such ZnO_1-x/graphene heterostructures were constructed from non-stoichiometric zinc oxide (ZnO_1-x) film and graphene by first depositing ZnO_1-x layer through radio frequency magnetron sputtering onto silicon wafers with SiO₂ layer and then transferring graphene via a wet method. It was revealed that such heterostructures could have improved photoelectric properties. Compared with ZnO_1-x films, the absorbance of the ZnO_1-x/graphene heterostructures in visible and near-infrared region was enhanced; and due to the high conductivity of graphene, the photocurrent was significantly enhanced both in dark and under irradiation of a 700 nm light. By calculating the absolute current gain, it was revealed that the fabricated ZnO_1-x/graphene heterostructures would have a higher current gain. Thus, such ZnO_1-x/graphene heterostructures would be promisingly applied in visible light to near-infrared detection devices.

• Periodical: Key Engineering Materials (Volume 768)
• Pages: 187-192
• DOI: https://doi.org/10.4028/www.scientific.net/KEM.768.187
• Online since: April 2018
• Authors: Jian Wen, Xiu Li Fu*, Zhao Xian Liu, Zhi Jian Peng
• Keywords: Device, Graphene, Photoelectric Properties, Thin Film, Zinc Oxide

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