Using Optical Activation to Create Hydrogen and Hydrogen-Containing Gas Sensors

Khafiz M. Salikhov; Nikolay D. Stoyanov; Tatyana V. Stoyanova

doi:10.4028/www.scientific.net/KEM.854.87

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 854Using Optical Activation to Create Hydrogen and...

Using Optical Activation to Create Hydrogen and Hydrogen-Containing Gas Sensors

Abstract:

It was found that at room temperature the value of the photoinduced current of Schottky diodes based on heterostructures InP/GaInAs/Pd at a hydrogen concentration of 0.03% is reduced by two orders of magnitude compared to the value without hydrogen. The value of the photoinduced current depends on the thickness of the depleted region on the surface of the semiconductor. A small change in the charged layer of H⁺ can cause a significant change in the thickness of this region and as a result, a strong change in the photoinduced current. This effect on current is much stronger than the influence of hydrogen concentration or capacitance without optical activation. As a result, it becomes possible to create hydrogen and hydrogen-containing gas sensors with much better sensitivity at room temperature. The original design of a miniature H₂ sensor including an IR LED, a Schottky diode with a Pd contact, a Peltier cooler and a thermosensor is demonstrated.

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Periodical:

Key Engineering Materials (Volume 854)

Pages:

87-93

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.854.87

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Online since:

July 2020

Authors:

Khafiz M. Salikhov*, Nikolay D. Stoyanov, Tatyana V. Stoyanova

Keywords:

Field Effect Transistor, Heterostructure, Hydrogen Detector, Optical Activation, The Photosensitivity of Schottky Diode

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