Influence of Reactive Oxygen Gas on Sputtered-Vanadium Oxide Films under Post-Annealing in Vacuum

S.Tipawan Khlayboonme; Warawoot Thowladda

doi:10.4028/www.scientific.net/KEM.872.27

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HomeKey Engineering MaterialsKey Engineering Materials Vol. 872Influence of Reactive Oxygen Gas on...

Influence of Reactive Oxygen Gas on Sputtered-Vanadium Oxide Films under Post-Annealing in Vacuum

Abstract:

Vanadium oxide thin films were deposited on glass substrates by O₂ reactive-RF magnetron sputtering from a vanadium (V) target without substrate-heating. The percentages of O₂ gas were 10%, 7.5%, 6.0%, 5.0% and 2.5%. The total gas flow rate (O₂/Ar) was kept at 25 sccm. As-deposited films were experienced post-annealing process at different temperatures and times. The crystallinity and chemical bonding states of films were examined by X-ray diffraction and Raman spectroscopy. The condition in annealing to active crystallinity depended on an earlier composition of the films. As O₂-gas percentages were 10% and 7.5%, after annealing, the as-deposited V_xO_y films were transformed into crystalline V₂O₅ films. With decreasing in O₂ percentage to 5.0% and 2.5%, the films were transformed into V₂O₃ and VO films, respectively. The films deposited with 6.0% O₂ were crystallized to VO₂ with phase B after annealing with 500 °C 15 h. By applying a longer time to 30 h at the high temperature 500 °C in annealing, VO₂ films revealed only phase M formation.

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Key Engineering Materials (Volume 872)

Pages:

27-31

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.872.27

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Online since:

January 2021

Authors:

S.Tipawan Khlayboonme*, Warawoot Thowladda

Keywords:

Annealing, Oxygen Effect, Raman Spectroscopy, Vanadium Oxide, XRD

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