Solid State Conversion: Microstructuring of Crystalline Al2O3 (Sapphire) by Annealing of Patterned Aluminium Films

Article Preview

Abstract:

Surface structuring on the nano/micro level is important for a huge range of areas. A critical bottle neck for many industrial applications is upscaling; that is to say it must be possible to do the structuring in a comparatively simple and inexpensive manner. However, this is a challenge for many industrially important materials, including sapphire. A few years ago, solid state conversion was introduced as a relatively simply nanoscale structuring method for sapphire. Here we show that the method, by careful choice of parameters, can be extended to work also on the micron scale. We show that a microstructured aluminium film deposited on a Al2O3 (0001) surface is converted into a crystalline Al2O3 surface, when thermally annealed in air, using optimized parameters.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

29-34

Citation:

Online since:

February 2021

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2021 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] C. Täschner, B. Ljungberg, V. Alfredsson, I. Endler, A. Leonhardt, Deposition of hard crystalline Al2O3 coatings by bipolar pulsed dc PACVD, Surf. Coat. Technol. 108 (1998) 257-264.

DOI: 10.1016/s0257-8972(98)00561-1

Google Scholar

[2] H. Li, H.-Y. Cheng, W.-L. Chen, Y.-H. Huang, C.-K. Li, C.-Y. Chang, Y.-R. Wu, T.-C. Lu, Y.-M. Chang, Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman photoluminescence spectromicroscopy, Sci. Rep. 7 (2017) 45519.

DOI: 10.1038/srep45519

Google Scholar

[3] J.-H. Ryou , W. Lee 2018 Nitride Semiconductor Light-Emitting Diodes (LEDs) (Second Edition), ed J Huang, et al.: Woodhead Publishing) pp.43-78.

DOI: 10.1016/b978-0-08-101942-9.00003-4

Google Scholar

[4] H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, G. Wang, Enhancement of the light output power of InGaN/GaN light-emitting diodes grown on pyramidal patterned sapphire substrates in the micro-and nanoscale, J. Appl. Phys. 103 (2008) 014314.

DOI: 10.1063/1.2830981

Google Scholar

[5] N. Akhtar, P.J. Thomas, B. Svardal, S. Almenningen, E. de Jong, S. Magnussen, P.R. Onck, M.A. Fernø, B. Holst, Pillars or Pancakes? Self-cleaning surfaces without coating, Nano Lett. 18 (2018) 7509-7514.

DOI: 10.1021/acs.nanolett.8b02982

Google Scholar

[6] S.X. Jiang, Z.Z. Chen, X.Z. Jiang, X.X. Fu, S. Jiang, Q.Q. Jiao, T.J. Yu , G.Y. Zhang, Study on the morphology and shape control of volcano-shaped patterned sapphire substrates fabricated by imprinting and wet etching, R. Soc. Chem. 17 (2015) 3070-3075.

DOI: 10.1039/c4ce02452d

Google Scholar

[7] P. De Mierry, N. Kriouche, M. Nemoz, S. Chenot, G. Nataf, Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching, Appl. Phys. Lett. 96 (2010) 231918.

DOI: 10.1063/1.3454278

Google Scholar

[8] Y.P. Hsu, S.J. Chang, Y.K. Su, J.K. Sheu, C.H. Kuo, C.S. Chang, S.C. Shei, ICP etching of sapphire substrates, Opt. Mater. 27 (2005) 1171-1174.

DOI: 10.1016/j.optmat.2004.08.076

Google Scholar

[9] C.H. Jeong, D.W. Kim, J.W. Bae, Y.J. Sung, J.S. Kwak, Y.J. Park, G.Y. Yeom, Dry etching of sapphire substrate for device separation in chlorine-based inductively coupled plasmas, Mater. Sci. Eng. B 93 (2002) 60-63.

DOI: 10.1016/s0921-5107(02)00019-3

Google Scholar

[10] H. Park, H.M. Chan, A novel process for the generation of pristine sapphire surfaces, Thin Solid Films 422 (2002) 135-140.

DOI: 10.1016/s0040-6090(02)00985-9

Google Scholar

[11] H. Park, H.M. Chan, R.P. Vinci, Patterning of sapphire substrates via a solid state conversion process, J. Mater. Res. 20 (2005) 417-423.

DOI: 10.1557/jmr.2005.0050

Google Scholar

[12] L. Cui, J.-C. Han, G.-G. Wang, H.-Y. Zhang, R. Sun, L.-H. Li, Large-scale fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by soft UV-nanoimprint lithography, Nanoscale Res. Lett. 8 (2013) 472.

DOI: 10.1186/1556-276x-8-472

Google Scholar

[13] J. Biser, Fabrication of Nanodot Decorated Sapphire Substrates for Abbreviated Growth Mode Deposition of Gallium Nitride, Lehigh University Theses and Dissertations, Lehigh University, (2013) Paper 1429.

Google Scholar

[14] A. Rai, K. Park, L. Zhou, M. Zachariah, Understanding the mechanism of aluminium nanoparticle oxidation, Combust. Theory Modell. 10 (2006) 843-859.

DOI: 10.1080/13647830600800686

Google Scholar

[15] N. Akhtar, V.R. Holm, P.J. Thomas, B. Svardal, S.H. Askeland, B. Holst, Underwater superoleophobic sapphire (0001) surfaces, J. Phys. Chem. C 119 (2015) 15333-15338.

DOI: 10.1021/acs.jpcc.5b03741

Google Scholar

[16] D.P. Birnie, S.K. Hau, D.S. Kamber, D.M. Kaz, Effect of ramping-up rate on film thickness for spin-on processing, J. Mater. Sci.: Mater. Electron. 16 (2005) 715-720.

DOI: 10.1007/s10854-005-4973-6

Google Scholar

[17] Y.-M. Shin, D. Gamzina, L.R. Barnett, F. Yaghmaie, A. Baig, N.C. Luhmann, UV lithography and molding fabrication of ultrathick micrometallic structures using a KMPR photoresist, J. Microelectromech. Syst. 19 (2010) 683-689.

DOI: 10.1109/jmems.2010.2045880

Google Scholar

[18] L. Cui, G.-G. Wang, H.-Y. Zhang, J.-C. Han, Effect of exposure parameters and annealing on the structure and morphological properties of nanopatterned sapphire substrates prepared by solid state reaction, Ceram. Int. 40 (2014) 4731-4737.

DOI: 10.1016/j.ceramint.2013.09.016

Google Scholar