Large Size Few-Layer Ambipolar MoS₂ Metal-Oxide-Semiconductor Field Effect Transistors by Nitrogen Plasma Doping

Abstract:

Molybdenum disulfide (MoS₂), a typical two-dimensional layered semiconductor material, is widely studied due its excellent electronic properties in atomic scale. In this study, we achieved the growth of large size few-layer MoS₂ films by using molybdenum boat with vertical shield at the end to carry MoO₃ precursor in the chemical vapor deposition (CVD) system. The optical microscopy reveals the morphology and lateral size of as-grown films. The Raman spectrum testified that the synthesized films are few-layer MoS₂ with defects. Metal-oxide-semiconductor field effect transistors (MOSFETs) based on CVD-grown MoS₂ are fabricated, presenting n-type transportation with I_ON/I_OFF ratio about 10³. The transportation behaviour of MoS₂ MOSFETs is changed from n-type to ambipolar by introducing nitrogen plasma into MoS₂ films. The electron or hole transportation in MoS₂ is controlled by gate-source voltage. The ambipolar MOSFETs show I_ON/I_OFF ratio about 10³.

• Periodical: Key Engineering Materials (Volume 938)
• Pages: 89-94
• DOI: https://doi.org/10.4028/p-h5sa9v
• Online since: December 2022
• Authors: Wen Zhao Wang*, Yu Qian Liu, Xiang Bin Zeng
• Keywords: Ambipolar Metal-Oxide-Semiconductor Field Effect Transistors, Chemical Vapor Deposition, Molybdenum Boat, Nitrogen Plasma Doping

References

[1] Briggs, N. et al. A roadmap for electronic grade 2D materials. 2D Mater. 6, 022001 (2019).

[2] Marzari, N. et al. Large-Area Epitaxial Monolayer MoS2. ACS Nano 9, 4611–4620 (2015).

[3] Wang, S. et al. Shape Evolution of Monolayer MoS2 Crystals Grown by Chemical Vapor Deposition. Chem. Mater. 26, 6371–6379 (2014).

DOI: 10.1021/cm5025662

[4] Jiang, J. et al. Flexo-photovoltaic effect in MoS2. Nat. Nanotechnol. 16, 894901 (2021).

[5] Hong, S. et al. Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry. Nat. Commun. 12, 1–11 (2021).

DOI: 10.1038/s41467-021-23711-x

[6] Wadhwa, R. et al. Investigation of charge transport and band alignment of MoS2-ReS2 heterointerface for high performance and self-driven broadband photodetection. Appl. Surf. Sci. 569, 150949 (2021).

DOI: 10.1016/j.apsusc.2021.150949

[7] Park, M. et al. MoS2-Based Tactile Sensor for Electronic Skin Applications. Adv. Mater. 28, 2556–2562 (2016).

[8] Daus, A. et al. High-performance flexible nanoscale transistors based on transition metal dichalcogenides. Nat. Electron. 4, 495–501 (2021).

DOI: 10.1038/s41928-021-00598-6

[9] Song, S. et al. Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length. Nat. Commun. 13, 4916 (2022).

DOI: 10.1038/s41467-022-32582-9

[10] Liu, C., Wang, L., Qi, J. & Liu, K. Designed Growth of Large-Size 2D Single Crystals. Adv. Mater. 32, 1–10 (2020).

DOI: 10.1002/adma.202000046

[11] Zhu, L. et al. Scalable salt-templated directed synthesis of high-quality MoS2 nanosheets powders towards energetic and environmental applications. Nano Res. 13, 3098–3104 (2020).

DOI: 10.1007/s12274-020-2979-2

[12] Ling, X. et al. Role of the Seeding Promoter in MoS2 Growth by Chemical Vapor Deposition. Nano Lett. 14, 464–472 (2014).

[13] Shi, J. et al. Substrate facet effect on the growth of monolayer MoS2 on Au foils. ACS Nano 9, 4017–4025 (2015).

[14] Zhao, Y. et al. Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors. Adv. Funct. Mater. 27, 1603484 (2017).

DOI: 10.1002/adfm.201603484

[15] Wang, W. et al. Effect of Mo concentration on shape and size of monolayer MoS2 crystals by chemical vapor deposition. J. Phys. D. Appl. Phys. 50, 395501 (2017).

DOI: 10.1088/1361-6463/aa81ae

[16] Lee, C. et al. Anomalous lattice vibrations of single- and few-layer MoS2. ACS Nano 4, 2695–2700 (2010).

[17] Zhou, X. et al. Interlayer interaction on twisted interface in incommensurate stacking MoS2: A Raman spectroscopy study. J. Colloid Interface Sci. 538, 159–164 (2019).

DOI: 10.1016/j.jcis.2018.11.032

[18] Liu, X. et al. Suspended MoS2 Photodetector Using Patterned Sapphire Substrate. Small 17, 2100246 (1–8) (2021).

[19] Xie, J. et al. Analysis of Schottky barrier heights and reduced Fermi-level pinning in monolayer CVD-grown MoS2 field-effect-transistors. Nanotechnology 33, 225702 (2022).

DOI: 10.1088/1361-6528/ac55d2

[20] Kranthi Kumar, V., Dhar, S., Choudhury, T. H., Shivashankar, S. A. & Raghavan, S. A predictive approach to CVD of crystalline layers of TMDs: The case of MoS2. Nanoscale 7, 7802–7810 (2015).

DOI: 10.1039/c4nr07080a

[21] Kumar, N. et al. Growth of Highly Crystalline and Large Scale Monolayer MoS2 by CVD: The Role of substrate Position. Cryst. Res. Technol. 53, 1800002 (2018).

DOI: 10.1002/crat.201800002

[22] Dieterle, M. & Mestl, G. Raman spectroscopy of molybdenum oxides: Part II. Resonance Raman spectroscopic characterization of the molybdenum oxides Mo4O11 and MoO2. Phys. Chem. Chem. Phys. 4, 822–826 (2002).

DOI: 10.1039/b107046k

[23] Xu, H. et al. High-Performance Wafer-Scale MoS2 Transistors toward Practical Application. Small 14, 1803465 (2018).