Annealing of Irradiated Highly Phosphorous-Doped Czochralski Silicon

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Periodical:

Materials Science Forum (Volumes 10-12)

Edited by:

H.J. von Bardeleben

Pages:

1087-1092

DOI:

10.4028/www.scientific.net/MSF.10-12.1087

Citation:

B. G. Svensson and J. L. Lindström, "Annealing of Irradiated Highly Phosphorous-Doped Czochralski Silicon", Materials Science Forum, Vols. 10-12, pp. 1087-1092, 1986

Online since:

January 1986

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$35.00

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