Defect Generation in the Initial Stages of Epitaxial Growth of GaAs on Silicon by MBE

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Periodical:

Materials Science Forum (Volumes 10-12)

Edited by:

H.J. von Bardeleben

Pages:

205-210

DOI:

10.4028/www.scientific.net/MSF.10-12.205

Citation:

F.A. Ponce et al., "Defect Generation in the Initial Stages of Epitaxial Growth of GaAs on Silicon by MBE", Materials Science Forum, Vols. 10-12, pp. 205-210, 1986

Online since:

January 1986

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$35.00

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