Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment

Abstract:

We demonstrated the enhancement of the optically detected magnetic resonance (ODMR) contrast of negatively charged silicon vacancy (V_Si^-) in SiC by thermal treatment. To create high density V_Si^-, Proton Beam Writing (PBW) was conducted. After an annealing at 600 °C, ODMR contrast showed the highest value in the investigated temperature range. At a fewer irradiation fluence, despite no significant change was observed in terms of V_Si^- PL intensity, the improvement of the ODMR contrast was observed. Considering defect energy levels and annealing behavior previously reported, it was deduced that the improvement of the ODMR contrast was caused by the reduction of other irradiation induced defect centers, such as EH1/EH3 centers.

• Periodical: Materials Science Forum (Volume 1004)
• Pages: 337-342
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.1004.337
• Online since: July 2020
• Authors: Yoji Chiba*, Yuichi Yamazaki, Shin Ichiro Sato, Takahiro Makino, Naoto Yamada, Takahiro Satoh, Yasuto Hijikata, Takeshi Ohshima
• Keywords: Color Center, Optically Detected Magnetic Resonance, Photoluminescence, Proton Beam Writing, Silicon Vacancy

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