Review and Detail Classification of Stacking Faults in 4H-SiC Epitaxial Layer by Mirror Projection Electron Microscopy

Kentaro Ohira; Toshiyuki Isshiki; Hideki Sako; Masaki Hasegawa; Kenji Kobayashi; Katsunori Onuki

doi:10.4028/www.scientific.net/MSF.1004.314

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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Review and Detail Classification of Stacking...

Review and Detail Classification of Stacking Faults in 4H-SiC Epitaxial Layer by Mirror Projection Electron Microscopy

Abstract:

Stacking faults (SFs) in 4H-SiC epitaxial wafers were inspected by using a mirror projection electron microscope (MPJ) [1, 2]. Dark and bright line contrasts of SFs in MPJ images represent surface morphology and crystal defects located in the epitaxial layer. Inspected SFs were classified into three types of SFs on the basis of the MPJ images. After classification, a cross section of each type of SF was observed by transmission electron microscopy (TEM) to verify the classification result. Complex SFs classified by MPJ images consisted of prismatic plane and basal plane SFs.

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Silicon Carbide and Related Materials 2019

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

314-320

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.314

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Online since:

July 2020

Authors:

Kentaro Ohira*, Toshiyuki Isshiki, Hideki Sako, Masaki Hasegawa, Kenji Kobayashi, Katsunori Onuki

Keywords:

4H-SiC, Complex SF, Mirror Projection Microscope, Prismatic SF, Stacking Faults, TEM

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