Quantitative Characterization of Surface Polarity Dependence of Wetting Properties of V-Doped SiC Using a Novel Image Analysis Technique

Jung Gon Kim; Woo Sik Yoo; Dae Sung Kim; Won Jae Lee

doi:10.4028/www.scientific.net/MSF.1004.284

Paper Titles

SiC Natural and Artificial Superlattices for the Implementation of the Bloch Oscillation Process: A Comparative Analysis
p.256

Photoluminescence Characterization of Fluorescent Sic with High Boron and Nitrogen Concentrations
p.265

Resistivity Measurement of P⁺-Implanted 4H-SiC Samples Prepared at Different Implantation and Annealing Temperatures Using Terahertz Time-Domain Spectroscopic Ellipsometry
p.272

Investigation of the Influence of Structural Defects on the PL Spectra in n-3C-SiC
p.278

Quantitative Characterization of Surface Polarity Dependence of Wetting Properties of V-Doped SiC Using a Novel Image Analysis Technique
p.284

Interest of Using a Micro-Meter Spatial Resolution to Study SiC Semi-Conductor Devices by Optical Beam Induced Current (OBIC)
p.290

Influence of Shallow Pits and Device Design of 4H-SiC VDMOS Transistors on In-Line Defect Analysis by Photoluminescence and Differential Interference Contrast Mapping
p.299

A New Technique for Analyzing Defects in Silicon Carbide Devices: Electrically Detected Electron Nuclear Double Resonance
p.306

Review and Detail Classification of Stacking Faults in 4H-SiC Epitaxial Layer by Mirror Projection Electron Microscopy
p.314

HomeMaterials Science ForumMaterials Science Forum Vol. 1004Quantitative Characterization of Surface Polarity...

Quantitative Characterization of Surface Polarity Dependence of Wetting Properties of V-Doped SiC Using a Novel Image Analysis Technique

Abstract:

Vanadium doped semi-insulating (SI) 6H-SiC {0001} substrates and their wetting properties were characterized using precisely dispensed de-ionized (DI) water drops. Radius, contact angle, width (chord), height and cap volume of a DI water drop on the SiC surface were quantitatively determined by analyzing sideview images of DI water drop in contact with SI 6H-SiC {0001} substrates using image processing software. The average of ten (10) contact angle measurements showed approximately 4 ° difference between the Si-face (48.48°) and the C-face (44.33º). Contact angle on the Si-face (0001) measured after native oxide removal showed significant decrease of contact angle, from 55° to 25° and recovered over time by room temperature oxidation in air. In contrast, contact angle on the C-face (000-1), measured after native oxide removal, showed significant increase of contact angle, from 40° to 54°, and continue to increase contact angle up to 71° after room temperature oxidation for 24 hours in air. Contact angle is found to be very sensitive to SiC surface polarity and specific surface conditions. Contact angle measurement, using image analysis techniques, can be applied as an in-line identification and surface condition characterization technique for SiC polytypes of specific surface polarities.