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Photoluminescence Characterization of Fluorescent Sic with High Boron and Nitrogen Concentrations

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Abstract:

The dependence of optical properties on impurity concentrations and excitation power was explored. In particular, it was found that the peak shift of photoluminescence (PL) is proportional to the boron concentration. This might be due to donor–acceptor pair (DAP) recombination via double deep acceptor levels (D-centers), where the occupancy of the D*-center increased with the B concentration, and the recombination via the D*-center for longer wavelengths became dominant. Moreover, the relative constants B and C were calculated by BC model fitting from the internal quantum efficiency (IQE) curve as a function of excitation power. The theoretical extrapolation based on BC model predicted that high impurity concentrations are sufficient to suppress the droop phenomenon of efficiency induced by the increased excitation power.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

265-271

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.265

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Online since:

July 2020

Authors:

Daiki Tanaka*, Wei Fang Lu, Satoshi Kamiyama, Motoaki Iwaya, Tetsuya Takeuchi, Isamu Akasaki

Keywords:

Fluorescent SiC, Internal Quantum Efficiency, Optical Characterization of SiC

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