Interest of Using a Micro-Meter Spatial Resolution to Study SiC Semi-Conductor Devices by Optical Beam Induced Current (OBIC)

Camille Sonneville; Dominique Planson; Luong Viet Phung; Pascal Bevilacqua; Besar Asllani

doi:10.4028/www.scientific.net/MSF.1004.290

Paper Titles

Photoluminescence Characterization of Fluorescent Sic with High Boron and Nitrogen Concentrations
p.265

Resistivity Measurement of P⁺-Implanted 4H-SiC Samples Prepared at Different Implantation and Annealing Temperatures Using Terahertz Time-Domain Spectroscopic Ellipsometry
p.272

Investigation of the Influence of Structural Defects on the PL Spectra in n-3C-SiC
p.278

Quantitative Characterization of Surface Polarity Dependence of Wetting Properties of V-Doped SiC Using a Novel Image Analysis Technique
p.284

Interest of Using a Micro-Meter Spatial Resolution to Study SiC Semi-Conductor Devices by Optical Beam Induced Current (OBIC)
p.290

Influence of Shallow Pits and Device Design of 4H-SiC VDMOS Transistors on In-Line Defect Analysis by Photoluminescence and Differential Interference Contrast Mapping
p.299

A New Technique for Analyzing Defects in Silicon Carbide Devices: Electrically Detected Electron Nuclear Double Resonance
p.306

Review and Detail Classification of Stacking Faults in 4H-SiC Epitaxial Layer by Mirror Projection Electron Microscopy
p.314

From Wafers to Bits and Back again: Using Deep Learning to Accelerate the Development and Characterization of SiC
p.321

HomeMaterials Science ForumMaterials Science Forum Vol. 1004Interest of Using a Micro-Meter Spatial Resolution...

Interest of Using a Micro-Meter Spatial Resolution to Study SiC Semi-Conductor Devices by Optical Beam Induced Current (OBIC)

Abstract:

In this paper we present a new test bench called micro-OBIC used to characterized wide band gap semi-conductor. Micro-OBIC allows to get an Optical Beam Induced Current (OBIC) signal with a microscopic spatial resolution. We used micro-OBIC to characterize peripheral protection such as MESA, JTE or JTE in high voltage SiC device.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2019

View Preview

Info:

Periodical:

Materials Science Forum (Volume 1004)

Pages:

290-298

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.290

Citation:

Cite this paper

Online since:

July 2020

Authors:

Camille Sonneville, Dominique Planson*, Luong Viet Phung, Pascal Bevilacqua, Besar Asllani

Keywords:

OBIC Characterization, Silicon Carbide High Voltage Diodes, TCAD, Wide Band Gap Semi-Conductor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] T. Kimoto and J.A. Cooper, Fundamentals of Silicon Carbide Technology, Wiley, Sing., (2014).

Google Scholar

[2] R. Stengl, High-voltage planar junctions investigated by the OBIC method, IEEE Transactions on electron devices, 34 (1987) 911-919.

DOI: 10.1109/t-ed.1987.23015

Google Scholar

[3] H. Hamad, D. Planson, C. Raynaud, P. Bevilacqua, OBIC technique applied to wide bandgap semiconductors from 100 K up to 450 K, Semicond. Sci. Technol. 32 (2017) 054001.

DOI: 10.1088/1361-6641/aa641d

Google Scholar

[4] C. Raynaud, D. Nguyen, N. Dheilly, D. Tournier, P. Brosselard, M. Lazar and D. Planson, Optical beam induced current measurements: principles and applications to SiC device characterization. phys. stat. sol. (a), 206 (2009) 2273-2283.

DOI: 10.1002/pssa.200825183

Google Scholar

[5] D Planson, B Asllani, LV Phung, P Bevilacqua, H Hamad, C Raynaud, Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors, Materials Science in Semiconductor Processing, 94 (2019) 116-127.

DOI: 10.1016/j.mssp.2019.01.042

Google Scholar

[6] D.M. Nguyen, R. Huang, L.V. Phung, D. Planson, M. Berthou, P. Godignon, B. Vergne, P. Brosselard, Edge termination design improvements for 10 kV 4H-SiC bipolar diodes Materials Science Forum Vols. 740-742 (2013), 609-612.

DOI: 10.4028/www.scientific.net/msf.740-742.609

Google Scholar

[7] P. Hauer, J. Grand, A. Djorovic, G. R. Willmott, and E. C. Le Ru, Spot Size Engineering in Microscope-Based Laser Spectroscopy, J. Phys. Chem. C, 120, 37 (2016) 21104-21113.

DOI: 10.1021/acs.jpcc.6b04574

Google Scholar

[8] B. Vergne, S. Scharnholz, R. Hassdorf, D. Planson, D. Tournier, P. Brosselard Precise automated semiconductor characterization under ambient control (PASHAC) – An advanced test bench for high-voltage semiconductor. ISH – International Symposium on High Voltage Engineering, Pilsen, Czech Republic.

DOI: 10.1109/smicnd.2014.6966383

Google Scholar

[9] Synopsys, (2019 09 19) Sentaurus TCAD, Retrieved from: https://www.synopsys.com/content/ dam/synopsys/silicon/datasheets/sentaurus_ds.pdf.

DOI: 10.1007/978-981-10-3066-6_1

Google Scholar

[10] J. Hasegawa, L. Pace, L. V. Phung, M. Hatano and D. Planson, Simulation-Based Study About the Lifetime and Incident Light Properties Dependence of the Optically Triggered 4H-SiC Thyristors Operation,, in IEEE Transactions on Electron Devices, vol. 64, no. 3, March (2017), 1203-1208.

DOI: 10.1109/ted.2017.2657223

Google Scholar

[11] D. Planson, B. Asllani, H. Hamad, M.-L. Locatelli, L. Wei, C. Raynaud, P. Bevilacqua, L.V. Phung Near breakdown voltage optical beam induced current (OBIC) on 4H-SiC bipolar diode Materials Science Forum Vol. 924 (2018) pp.577-580.

DOI: 10.4028/www.scientific.net/msf.924.577

Google Scholar