The Effect of γ-Ray Irradiation on Optical Properties of Single Photon Sources in 4H-SiC MOSFET

Abstract:

We investigated the effects of γ-ray irradiation to single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductors field-effect transistors (MOSFETs). After the γ-ray irradiation, the number of SPSs was temporarily increased. However, the ratio of unstable SPSs was increased with increasing the radiation dose, and such unstable ones gradually disappeared. Finally, the density of the SPSs nearly recovered that before the irradiation. We discuss a possible explanation on these phenomena in terms of interactions between mobile hydrogen atoms and interface defects.

• Periodical: Materials Science Forum (Volume 1004)
• Pages: 361-366
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.1004.361
• Online since: July 2020
• Authors: Yuta Abe*, Takahide Umeda, Mitsuo Okamoto, Shinsuke Harada, Yuichi Yamazaki, Takeshi Ohshima
• Keywords: Gamma-Ray Irradiation, MOS Interface, MOSFET, Single Photon Source

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