4H-SiC Epi-Ready Substrate Qualification by Using Mirror Electron Microscope Inspection System

Masaki Hasegawa; Kentaro Ohira; Noriyuki Kaneoka; Tomohiko Ogata; Katsunori Onuki; Kenji Kobayashi; Tsutom Osanai; Keiko Masumoto; Junji Senzaki

doi:10.4028/www.scientific.net/MSF.1004.369

Paper Titles

Optically Detected Magnetic Resonance Study of 3D Arrayed Silicon Vacancies in SiC pn Diodes
p.343

Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC
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Near Infrared Photoluminescence of N_CV_Si^- Centers in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles
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The Effect of γ-Ray Irradiation on Optical Properties of Single Photon Sources in 4H-SiC MOSFET
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4H-SiC Epi-Ready Substrate Qualification by Using Mirror Electron Microscope Inspection System
p.369

Photoluminescence Analysis of Individual Partial Dislocations in 4H-SiC Epilayers
p.376

Characterization and Reduction of Defects in 4H-SiC Substrate and Homo-Epitaxial Wafer
p.387

Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers
p.393

BPD-TED Conversion in the SiC Substrate after High-Temperature Si-VE
p.401

HomeMaterials Science ForumMaterials Science Forum Vol. 10044H-SiC Epi-Ready Substrate Qualification by Using...

4H-SiC Epi-Ready Substrate Qualification by Using Mirror Electron Microscope Inspection System

Abstract:

Crystal damage beneath the surface remaining after chemo-mechanical polishing (CMP) and basal plane dislocations (BPDs) of 4H-SiC epi-ready substrates have been inspected by using a mirror electron microscope inspection system non-destructively. Distributions of crystal damage and BPDs as well as their average densities are estimated by acquiring 80-μm square mirror electron images at positions distributed with an equal pitch over a substrate (“Discrete point set inspection”). Although the total inspected area is less than 1% of the entire substrate area, the inspection results for nine commercially available wafers reveal that there are large differences in surface polishing quality and BPD density between them. Evaluation on an epitaxial layer with a thickness of 10 μm grown on one of the inspected substrates indicated that correlation between distribution of the crystal damages on the substrate and that of bunched steps on the epitaxial layer surface.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

369-375

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.369

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Online since:

July 2020

Authors:

Masaki Hasegawa*, Kentaro Ohira, Noriyuki Kaneoka, Tomohiko Ogata, Katsunori Onuki, Kenji Kobayashi, Tsutom Osanai, Keiko Masumoto, Junji Senzaki

Keywords:

4H-SiC, Basal Plane Dislocations, Bunched Step, Epi-Ready Surface, Latent Scratch, Mirror Electron Microscope

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