BPD-TED Conversion in the SiC Substrate after High-Temperature Si-VE

Yusuke Sudoh; Makoto Kitabatake; Tadaaki Kaneko

doi:10.4028/www.scientific.net/MSF.1004.401

Paper Titles

4H-SiC Epi-Ready Substrate Qualification by Using Mirror Electron Microscope Inspection System
p.369

Photoluminescence Analysis of Individual Partial Dislocations in 4H-SiC Epilayers
p.376

Characterization and Reduction of Defects in 4H-SiC Substrate and Homo-Epitaxial Wafer
p.387

Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers
p.393

BPD-TED Conversion in the SiC Substrate after High-Temperature Si-VE
p.401

Dislocations Analysis on Implanted (p-Type and n-Type) 4H-SiC Epi-Layer by KOH Molten Etching
p.408

TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth
p.414

Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers
p.421

Formation of Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Reduction of Residual Stress around Scratch Damage
p.427

HomeMaterials Science ForumMaterials Science Forum Vol. 1004BPD-TED Conversion in the SiC Substrate after...

BPD-TED Conversion in the SiC Substrate after High-Temperature Si-VE

Abstract:

We propose the Si-Vapor Etching (Si-VE), which is thermal chemical etching process, as epi-ready treatment for Silicon Carbide (SiC). In this work, we report the evaluation results of BPD-TED conversion by Si-VE treatment using repeated KOH etching process. This method makes it possible to observe BPD-TED conversion in a very shallow surface region of the SiC substrate. 80% of BPDs is converted to TEDs with a depth of more than 80nm under optimized Si-VE 2000°C conditions. Furthermore, 53% of BPDs were converted to TEDs with 140nm or more depth, which has been confirmed under optimized 1800°C Si-VE conditions.

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Materials Science Forum (Volume 1004)

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401-407

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https://doi.org/10.4028/www.scientific.net/MSF.1004.401

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Online since:

July 2020

Authors:

Yusuke Sudoh*, Makoto Kitabatake, Tadaaki Kaneko

Keywords:

BPD-TED Conversion, KOH Etching, Si-Vapor Etching

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