Formation of Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Reduction of Residual Stress around Scratch Damage

Naohiro Sugiyama; Takeshi Mitani; Isaho Kamata; Tomohisa Kato; Hidekazu Tsuchida; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.1004.427

Paper Titles

BPD-TED Conversion in the SiC Substrate after High-Temperature Si-VE
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TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth
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Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers
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Formation of Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Reduction of Residual Stress around Scratch Damage
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Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress
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Evaluation of Suppressing Forward Voltage Degradation by Using a Low BPD Density Substrate or an Epitaxial Wafer with an HNDE
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Crystalline Quality Evaluation of SiC p/n Column Layers Formed by Trench-Filling-Epitaxial Growth
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Investigation of Dislocations Inducing Leakage Current on SiC Junction Barrier Schottky Diode by Two-Photon-Excited Band-Edge Photoluminescence
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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Formation of Double Shockley Stacking Faults in...

Formation of Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Reduction of Residual Stress around Scratch Damage

Abstract:

The scratch damage that caused the generation of double Shockley stacking faults (DSFs) in heavily nitrogen doped 4H-SiC crystal was investigated quantitatively. Scratch tests were carried out on 4H-SiC substrates with a nitrogen concentration of 2.6 × 10¹⁹ cm^-3. A residual tensile stress of 40 MPa was detected around the scratch loaded at 30 mN with a diamond tip. DSFs were generated from this scratch by annealing at 1100°C for 2 h in Ar atmosphere. After annealing, the residual stress around the scratch was reduced to a tensile stress of 10 MPa. This result suggests that the reduction of residual stress around the scratch coincided with the formation of DSFs.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

427-432

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.427

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Online since:

July 2020

Authors:

Naohiro Sugiyama*, Takeshi Mitani, Isaho Kamata, Tomohisa Kato, Hidekazu Tsuchida, Hajime Okumura

Keywords:

Double Shockley Stacking Fault, Nitrogen Doping, PL Mapping, Raman Spectroscopy, Residual Stress, Scanning Electron Microscope (SEM), Scratch Damage, Synchrotron X-Ray Topography, Thermal Annealing

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