Dislocations Analysis on Implanted (p-Type and n-Type) 4H-SiC Epi-Layer by KOH Molten Etching

Ruggero Anzalone; Andrea Severino; Nicolo Piluso; Salvo Coffa

doi:10.4028/www.scientific.net/MSF.1004.408

Paper Titles

Photoluminescence Analysis of Individual Partial Dislocations in 4H-SiC Epilayers
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Characterization and Reduction of Defects in 4H-SiC Substrate and Homo-Epitaxial Wafer
p.387

Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers
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BPD-TED Conversion in the SiC Substrate after High-Temperature Si-VE
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Dislocations Analysis on Implanted (p-Type and n-Type) 4H-SiC Epi-Layer by KOH Molten Etching
p.408

TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth
p.414

Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers
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Formation of Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Reduction of Residual Stress around Scratch Damage
p.427

Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress
p.433

HomeMaterials Science ForumMaterials Science Forum Vol. 1004Dislocations Analysis on Implanted (p-Type and...

Dislocations Analysis on Implanted (p-Type and n-Type) 4H-SiC Epi-Layer by KOH Molten Etching

Abstract:

In this work the effect of the ion implantation on the dislocations structure of the 4H-SiC epilayer after the KOH etching has been investigated. The study was conducted using both Aluminum (Al) and Phosphorous (P) species for p-type and n-type, respectively. The ion implantations of Al and P were carried out at different energies (30–200 keV) to achieve 300 nm thick acceptor box profiles with a concentration of about 10²⁰ at/cm3. The implanted samples were annealed at high temperatures. With sequential sacrificial and stopping layer both species has been implanted on the same sample. Morphological charaterization of the samples (optical microscope and SEM) shown different structural modification of the dislocations (experically TED) after the KOH etching of the samples.

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Materials Science Forum (Volume 1004)

Pages:

408-413

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.408

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Online since:

July 2020

Authors:

Ruggero Anzalone*, Andrea Severino, Nicolo Piluso, Salvo Coffa

Keywords:

4H-SiC, Dislocations, Implantation, KOH Etching, TED, Threading Screw Dislocations (TSDs)

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