TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth

Junro Takahashi; Kotaro Kawaguchi; Kazuhiko Kusunoki; Tomoyuki Ueyama; Kazuhito Kamei

doi:10.4028/www.scientific.net/MSF.1004.414

Paper Titles

Characterization and Reduction of Defects in 4H-SiC Substrate and Homo-Epitaxial Wafer
p.387

Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers
p.393

BPD-TED Conversion in the SiC Substrate after High-Temperature Si-VE
p.401

Dislocations Analysis on Implanted (p-Type and n-Type) 4H-SiC Epi-Layer by KOH Molten Etching
p.408

TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth
p.414

Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers
p.421

Formation of Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Reduction of Residual Stress around Scratch Damage
p.427

Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress
p.433

Evaluation of Suppressing Forward Voltage Degradation by Using a Low BPD Density Substrate or an Epitaxial Wafer with an HNDE
p.439

HomeMaterials Science ForumMaterials Science Forum Vol. 1004TEM Studies on the Microstructure of m-Face Grown...

TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth

Abstract:

We have studied the microstructure of the growth surface of the 4H-SiC grown by the m-face solution growth. Atomic Force Microscopy (AFM) revealed the micro-striped morphology with the asperity of several nm in the band-like morphology region. The cross-sectional Transmission Electron Microscopy (XTEM) showed that the growth surface consisted of a bunch of nanofacets and vicinal surface. This peculiar morphology is totally different from that of conventional spiral growth on c-face, which can be closely related with the growth mechanism of the m-face solution growth.