Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers

Hideki Sako; Kentaro Ohira; Kenji Kobayashi; Toshiyuki Isshiki

doi:10.4028/www.scientific.net/MSF.1004.421

Paper Titles

Synchrotron X-Ray Topography Study on the Relationship between Local Basal Plane Bending and Basal Plane Dislocations in PVT-Grown 4H-SiC Substrate Wafers
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TEM Studies on the Microstructure of m-Face Grown 4H-SiC by Solution Growth
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Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers
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Formation of Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Reduction of Residual Stress around Scratch Damage
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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Structural Characterization of Prismatic Stacking...

Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers

Abstract:

Two types of carrot defects with and without a shallow pit were found by mirror projection electron microscopy (MPJ) inspection in 4H-SiC epi wafer. Surface morphology and cross-sectional structure of prismatic stacking faults (PSFs) were investigated using MPJ and atomic force microscopy (AFM), transmission electron microscopy (TEM) and high-resolution scanning transmission electron microscopy (STEM). The depths of the surface grooves due to the PSFs, the stacking sequences around the PSFs and the structure of the Frank-type stacking faults which were connected to the PSFs were different. We discuss the difference between the two types of carrot defects.

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Materials Science Forum (Volume 1004)

Pages:

421-426

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.421

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Online since:

July 2020

Authors:

Hideki Sako*, Kentaro Ohira, Kenji Kobayashi, Toshiyuki Isshiki

Keywords:

4H-SiC, Atomic Force Microscope (AFM), Carrot Defect, MPJ, Prismatic SF, STEM, TEM

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