Crystalline Quality Evaluation of SiC p/n Column Layers Formed by Trench-Filling-Epitaxial Growth

Kohei Adachi; Ryoji Kosugi; Shi Yang Ji; Yasuyuki Kawada; Hiroyuki Fujisawa; Shingo Tomohisa; Naruhisa Miura; Yoshiyuki Yonezawa; Hajime Okumura

doi:10.4028/www.scientific.net/MSF.1004.445

Paper Titles

Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers
p.421

Formation of Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Reduction of Residual Stress around Scratch Damage
p.427

Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress
p.433

Evaluation of Suppressing Forward Voltage Degradation by Using a Low BPD Density Substrate or an Epitaxial Wafer with an HNDE
p.439

Crystalline Quality Evaluation of SiC p/n Column Layers Formed by Trench-Filling-Epitaxial Growth
p.445

Investigation of Dislocations Inducing Leakage Current on SiC Junction Barrier Schottky Diode by Two-Photon-Excited Band-Edge Photoluminescence
p.451

Statistical Analysis of Killer and Non-Killer Defects in SiC and the Impacts to Device Performance
p.458

Investigation of Bipolar Degradation of 1.2 kV BJTs under Different Current and Temperature Conditions
p.464

Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test
p.472

HomeMaterials Science ForumMaterials Science Forum Vol. 1004Crystalline Quality Evaluation of SiC p/n Column...

Crystalline Quality Evaluation of SiC p/n Column Layers Formed by Trench-Filling-Epitaxial Growth

Abstract:

We evaluated crystalline quality of SiC p/n column layers over 20 μm thickness formed by trench-filling-epitaxial growth. Although threading dislocation density of trench-filling-epitaxial layer is almost same as flat n-type epitaxial layer, threading dislocations are localized in only trench-filled p-columns. We consider that threading dislocations migrated toward p-columns around trench bottom during trench-filling-epitaxial growth.

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Materials Science Forum (Volume 1004)

Pages:

445-450

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.445

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Online since:

July 2020

Authors:

Kohei Adachi*, Ryoji Kosugi, Shi Yang Ji, Yasuyuki Kawada, Hiroyuki Fujisawa, Shingo Tomohisa, Naruhisa Miura, Yoshiyuki Yonezawa, Hajime Okumura

Keywords:

PL Imaging, Super-Junction, Threading Dislocation, Trench-Filling-Epitaxial Growth, XRD

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References

[1] R. Kosugi, S.Y. Ji, K. Mochizuki, K. Adachi, S. Segawa, Y. Kawada, Y. Yonezawa and H. Okumura, Proc. of ISPSD (2019) 39-42.

Google Scholar

[2] R. Kosugi, Y. Sakuma, K. Kojima, S. Itoh, A. Nagata, T. Yatsuo, Y. Tanaka and H. Okumura, Mat. Sci. Forum 778-780 (2014) 845-850.

DOI: 10.4028/www.scientific.net/msf.778-780.845

Google Scholar

[3] R. Kosugi, Y. Sakuma, K. Kojima, S. Itoh, A. Nagata, T. Yatsuo, Y. Tanaka and H. Okumura, Proc. of ISPSD (2014) 346-349.

DOI: 10.1109/ispsd.2014.6856047

Google Scholar

[4] S. Yamauchi, Y. Hattori and H. Yamaguchi, Proc. of ISPSD (2003) 207-210.

Google Scholar

[5] Y. Hattori, K. Nakashima, M. Kuwahara, T. Yoshida, S. Yamauchi and H. Yamaguchi, Proc. of ISPSD (2004) 189-192.

Google Scholar

[6] S.Y. Ji, R. Kosugi, K. Kojima, K. Mochizuki, Y. Kawada, K. Adachi, S. Saito, A. Nagata, Y. Matsukawa, Y. Yonezawa, S. Yoshida and H. Okumura, Mater. Sci. Forum 924 (2018) 116-119.

DOI: 10.4028/www.scientific.net/msf.924.116

Google Scholar

[7] S.Y. Ji, R. Kosugi, K. Kojima, K. Mochizuki, S. Saito, A. Nagata, Y. Matsukawa, Y. Yonezawa, S. Yoshida and H. Okumura, Appl. Phys. Express 10 (2017) 055505.

DOI: 10.7567/apex.10.055505

Google Scholar

[8] S.A. Sakwe, R. Müller and P.J. Wellmann, J. Cryst. Growth 289 (2006) 520-526.

Google Scholar