Investigation of Bipolar Degradation of 1.2 kV BJTs under Different Current and Temperature Conditions

Sarah Rugen; Siddarth G. Sundaresan; Ranbir Singh; Nando Kaminski

doi:10.4028/www.scientific.net/MSF.1004.464

Paper Titles

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Investigation of Dislocations Inducing Leakage Current on SiC Junction Barrier Schottky Diode by Two-Photon-Excited Band-Edge Photoluminescence
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Statistical Analysis of Killer and Non-Killer Defects in SiC and the Impacts to Device Performance
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Investigation of Bipolar Degradation of 1.2 kV BJTs under Different Current and Temperature Conditions
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Evolution of SiO_x Shell Layers on SiC-SiO_x Core-Shell Nanowires
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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Investigation of Bipolar Degradation of 1.2 kV...

Investigation of Bipolar Degradation of 1.2 kV BJTs under Different Current and Temperature Conditions

Abstract:

Bipolar silicon carbide devices are attractive for high power applications offering high voltage devices with low on-state voltages due to plasma flooding. Unfortunately, these devices suffer from bipolar degradation, which causes a significant degradation of the on-state voltage. To explore the generation of stacking faults, which cause the degradation, the impact of the current density and temperature on bipolar degradation is investigated in this work. The analysis is done by stressing the base-collector diode of 1.2 kV bipolar junction transistors (BJTs) as well as the BJTs in common-emitter mode operation with different current densities at different temperatures.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

464-471

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.464

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Online since:

July 2020

Authors:

Sarah Rugen*, Siddarth G. Sundaresan, Ranbir Singh, Nando Kaminski

Keywords:

Bipolar Degradation, Current Gain, SiC BJT, Silicon Carbide, Stacking Faults

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