Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test

Andrea Severino; Ruggero Anzalone; Nicolo Piluso; Elisa Vitanza; Beatrice Carbone; Alfio Russo; Salvo Coffa

doi:10.4028/www.scientific.net/MSF.1004.472

Paper Titles

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Investigation of Bipolar Degradation of 1.2 kV BJTs under Different Current and Temperature Conditions
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Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test
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Evolution of SiO_x Shell Layers on SiC-SiO_x Core-Shell Nanowires
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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Impact of Threading Dislocations Detected by KOH...

Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test

Abstract:

In this study, the correlation between the Emission Microscopy (Em.Mi.) related to the failure site of the 4H-SiC 650V MOSFET devices after reliability test and epitaxial dislocation defects is presented. Devices failed at the High-Temperature Reverse Bias (HTRB) test were considered. Device layers have been stripped out by chemical wet etching and etched in a high temperature KOH solution to characterize defects emerging at the SiC surface. This approach was used to correlate failure emission spots with underlying structure of the material. KOH etching process on delayered devices was performed at 500°C for 10 minutes and then analysis by optical microscopy and SEM was carried out for defect classification and correlation with failure location.

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Materials Science Forum (Volume 1004)

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472-476

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.472

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Online since:

July 2020

Authors:

Andrea Severino*, Ruggero Anzalone, Nicolo Piluso, Elisa Vitanza, Beatrice Carbone, Alfio Russo, Salvo Coffa

Keywords:

4H-SiC, Device Failure, Dislocations, Em.Mi Emission, High-Temperature Reverse Bias (HTRB), KOH Etching, Reliability Test

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