Statistical Analysis of Killer and Non-Killer Defects in SiC and the Impacts to Device Performance

Hrishikesh Das; Swapna Sunkari; Joshua Justice; Helen Pham; George Park; Young Ho Seo

doi:10.4028/www.scientific.net/MSF.1004.458

Paper Titles

Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress
p.433

Evaluation of Suppressing Forward Voltage Degradation by Using a Low BPD Density Substrate or an Epitaxial Wafer with an HNDE
p.439

Crystalline Quality Evaluation of SiC p/n Column Layers Formed by Trench-Filling-Epitaxial Growth
p.445

Investigation of Dislocations Inducing Leakage Current on SiC Junction Barrier Schottky Diode by Two-Photon-Excited Band-Edge Photoluminescence
p.451

Statistical Analysis of Killer and Non-Killer Defects in SiC and the Impacts to Device Performance
p.458

Investigation of Bipolar Degradation of 1.2 kV BJTs under Different Current and Temperature Conditions
p.464

Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test
p.472

Evolution of SiO_x Shell Layers on SiC-SiO_x Core-Shell Nanowires
p.479

Nano- and Micro-Scale Simulations of Ge/3C-SiC and Ge/4H-SiC NN-Heterojunction Diodes
p.490

HomeMaterials Science ForumMaterials Science Forum Vol. 1004Statistical Analysis of Killer and Non-Killer...

Statistical Analysis of Killer and Non-Killer Defects in SiC and the Impacts to Device Performance

Abstract:

Multi-channel defect detection in epitaxial SiC layers is used to detect and classify various extended defects. The effects of the killer defect category are analyzed on hundreds of production diode and MOSFET wafers. Invariably, the number of these killer defects sets the yield entitlement for each wafer, and electrically, they fall into a few expected failure bins depending on their position on the die. A variety of non-killer defects like Bar Stacking Faults (BSFs), V-type defects, isolated micro-pipe related bumps, stacking faults, scratches and deep pits are identified in over thousand die each, and their effect on fully fabricated diode and MOSFET products are determined at wafer sort. A very high percentage of the die containing these non-killer defects pass all electrical tests including the rigorous Unclamped Inductive Switching (UIS) testing. Specifically, a population of electrically passing die, containing BSFs, are identified and packaged for High Temperature Reverse Bias (HTRB) tests. Every BSF containing die passes both forward and reverse 1000-hour HTRB drift tests.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2019

View Preview

Info:

Periodical:

Materials Science Forum (Volume 1004)

Pages:

458-463

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.458

Citation:

Cite this paper

Online since:

July 2020

Authors:

Hrishikesh Das*, Swapna Sunkari, Joshua Justice, Helen Pham, George Park, Young Ho Seo

Keywords:

Classification, Defects, Epitaxy, Kill-Rate, Reliability, Statistics, UIS, Yield

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] H. Das, S. Sunkari and H. Naas, ECS Transactions, 75 (12), pp.233-237, (2016).

Google Scholar

[2] H. Das, S. Sunkari, J. Justice, H. Pham and K.S. Park, Mater. Sci. Forum, 963, pp.284-287, (2019).

Google Scholar

[3] Non-destructive Recognition Procedures of Defects in Silicon Carbide Wafers: Parts 1-3, JEITA Standards, EDR-4712/100/200/300, (2016-2018).

Google Scholar

[4] E. Van Brunt, A. Burk, D. J. Lichtenwalner, R. Leonard, S. Sabri, A. Gajewski, A. Mackenzie, B. A. Hull, S. Allen, and J. W. Palmour. Mater. Sci. Forum, 924, pp.137-142, (2018).

DOI: 10.4028/www.scientific.net/msf.924.137

Google Scholar

[5] T. Kimoto and J. Cooper, Fundamentals of Silicon Carbide Technology,, p.161, (2014).

Google Scholar

[6] T. Tanaka, N. Kawabata, Y. Mitani, N. Tomita, M. Tarutani, T. Kuroiwa, Y. Toyoda, M. Imaizumi, H. Sumitani, and S. Yamakawa, Mater. Sci. Forum, 778-780, 91-94, (2014).

DOI: 10.4028/www.scientific.net/msf.778-780.91

Google Scholar

[7] N. A. Mahadik, R. E. Stahlbush, M. G. Ancona, E. A. Imhoff, K. D. Hobart, R. L. Myers-Ward, C. R. Eddy Jr., D. K. Gaskill and F. J. Kub, Appl. Phys. Lett. 100, 042102.1-3, (2012).

DOI: 10.1063/1.3679609

Google Scholar