Investigation of Dislocations Inducing Leakage Current on SiC Junction Barrier Schottky Diode by Two-Photon-Excited Band-Edge Photoluminescence

Yosuke Nakanishi; Tomoaki Noguchi; Takuyo Nakamura; Masaaki Ikegami; Kazuo Kobayashi; Kazuya Konishi; Kohei Ebihara

doi:10.4028/www.scientific.net/MSF.1004.451

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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Investigation of Dislocations Inducing Leakage...

Investigation of Dislocations Inducing Leakage Current on SiC Junction Barrier Schottky Diode by Two-Photon-Excited Band-Edge Photoluminescence

Abstract:

Tilt angles of threading dislocations (TDs) which induce leakage of current on SiC junction barrier schottky diodes (SiC-JBSs) were investigated by two-photon-excited photoluminescence (2PPL) and transmission electron microscopy (TEM). Observation of leakage spots measured by atomic force microscopy (AFM) revealed that pit-like structures were certainly formed but the depths were considerably shallow, indicating that influence of local electric field due to the structures was negligible on our SiC-JBSs. It became clear that tilt angles of the TDs inducing leakage were relatively larger than about 11° by 2PPL and that the TD was the threading mixed dislocation by TEM.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

451-457

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.451

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Online since:

July 2020

Authors:

Yosuke Nakanishi*, Tomoaki Noguchi, Takuyo Nakamura, Masaaki Ikegami, Kazuo Kobayashi, Kazuya Konishi, Kohei Ebihara

Keywords:

2PPL, Schottky Diode, Silicon Carbide, Threading Dislocation, Threading Screw Dislocations (TSDs)

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