Defects Characterization of GaN Substrate with Hot Implant Process

Junko Maekawa; Hitoshi Kawanowa; Masahiko Aoki; Katsumi Takahiro; Toshiyuki Isshiki

doi:10.4028/www.scientific.net/MSF.1004.497

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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Defects Characterization of GaN Substrate with Hot...

Defects Characterization of GaN Substrate with Hot Implant Process

Abstract:

The defect structure of Mg implanted GaN substrate was evaluated by TEM observations, AFM surface observations and Raman scattering spectroscopic analysis. Mg ions were implanted at room temperature (RT) and 500 °C. TEM results showed that the defect distribution along depth scale is different between RT and 500 °C condition. The several peaks originated from ion implantation were found from Raman scattering spectra and the characteristics of the defects by implantation were discussed. The crystal quality of the sample implanted at 500 °C was found to be better than that of RT by comparing the FWHM of the E₂ peak.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

497-504

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.497

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Online since:

July 2020

Authors:

Junko Maekawa*, Hitoshi Kawanowa, Masahiko Aoki, Katsumi Takahiro, Toshiyuki Isshiki

Keywords:

Atomic Force Microscope (AFM), Defects, GaN, Hot Implantation, Raman, SIMS, TEM

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