Dislocation Vector Analysis Method of Deep Dislocation Having C-Axis Segment in Diamond

Shinichi Shikata; Naoya Akashi

doi:10.4028/www.scientific.net/MSF.1004.519

Paper Titles

Nano- and Micro-Scale Simulations of Ge/3C-SiC and Ge/4H-SiC NN-Heterojunction Diodes
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Defects Characterization of GaN Substrate with Hot Implant Process
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Structural Characterization of a Ga₂O₃Epitaxial Layer Grown on a Sapphire Substrate Using Cross-Sectional and Plan-View TEM/STEM Analysis
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AFM Observation of Etch-Pit Shapes on β-Ga₂O₃ (001) Surface Formed by Molten Alkali Etching
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Dislocation Vector Analysis Method of Deep Dislocation Having C-Axis Segment in Diamond
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Graphene Quality Assessment Using an Entropy Approach of SEM Images
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Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiC
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Surface Treatment of 4H-SiC MOSFETs Prior to Al₂O₃ Deposition
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Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition
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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Dislocation Vector Analysis Method of Deep...

Dislocation Vector Analysis Method of Deep Dislocation Having C-Axis Segment in Diamond

Abstract:

X-ray topography is an effective tool to investigate dislocations in semiconductor crystals. Due to low X-ray absorption coefficients of diamond, X-rays can penetrate deep into the crystal. Thus, deep three-dimensional (3D) dislocations are projected on two-dimension (2D) film, which makes dislocation analysis particularly challenging. Dislocation vectors from the films obtained using a set of the same diffraction vectors were identified using topographical and geometrical analyses. The depth and position of the dislocations in a crystal that was projected on a film were determined using geometrical relationship. The proposed analysis method was verified by analyzing several dislocations using four <404> diffraction films. The types of dislocation were identified through Burgers vector analysis.

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Materials Science Forum (Volume 1004)

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519-524

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https://doi.org/10.4028/www.scientific.net/MSF.1004.519

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Online since:

July 2020

Authors:

Shinichi Shikata*, Naoya Akashi

Keywords:

Diamond, Dislocations, P+ Substrate, X-Ray Topography

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