Surface Treatment of 4H-SiC MOSFETs Prior to Al2O3 Deposition

Muhammad Idzdihar Idris; Alton B. Horsfall

doi:10.4028/www.scientific.net/MSF.1004.541

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Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiC
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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Surface Treatment of 4H-SiC MOSFETs Prior to Al2O3...

Surface Treatment of 4H-SiC MOSFETs Prior to Al₂O₃ Deposition

Abstract:

The effect of surface treatments prior to the deposition of Al₂O₃ is performed on 4H-SiC MOS capacitors and MOSFETs. 40 nm of Al₂O₃were deposited on 4H-SiC using atomic layer deposition (ALD) as a gate dielectric. Different surface treatments were used to investigate the capacitance-voltage and current-voltage characteristics on MOS capacitors and MOSFETs respectively, including the important parameters such as interface state density, flat band voltage, threshold voltage and field-effect mobility. Forming gas annealing and rapid oxidation processes were found to be effective in reducing the interface state density and results in high field-effect mobility with peak field-effect mobility of 130 cm²Vs^-1. The experimental results obtained manifest that the surface treatment prior to Al₂O₃deposition is critical to producing high performance of 4H-SiC MOSFETs.