4H-SiC Power VDMOSFET Manufacturing Utilizing POCl3 Post Oxidation Annealing

Yanrui Ju; Didier Bouvet; Roger Stark; Judith Woerle; Ulrike Grossner

doi:10.4028/www.scientific.net/MSF.1004.559

Paper Titles

Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiC
p.535

Surface Treatment of 4H-SiC MOSFETs Prior to Al₂O₃ Deposition
p.541

Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition
p.547

Effect of Phosphorus Doped Poly Annealing on Threshold Voltage Stability and Thermal Oxide Reliability in 4H-SiC MOSFET
p.554

4H-SiC Power VDMOSFET Manufacturing Utilizing POCl₃ Post Oxidation Annealing
p.559

Compatibility of POCl₃ Gate Process with the Fabrication of Vertical 4H-SiC MOSFETs
p.565

Wafer-Level near Zero Field Spin Dependent Charge Pumping: Effects of Nitrogen on 4H-SiC MOSFETs
p.573

Low-Energy Muons as a Tool for a Depth-Resolved Analysis of the SiO₂/4H-SiC Interface
p.581

Profiling with Depth Resolution of Sub-nm for SiO₂/ SiC Interface by Dual-Beam TOF-SIMS Combined with Simulation
p.587

HomeMaterials Science ForumMaterials Science Forum Vol. 10044H-SiC Power VDMOSFET Manufacturing Utilizing...

4H-SiC Power VDMOSFET Manufacturing Utilizing POCl₃ Post Oxidation Annealing

Abstract:

A novel POCl₃ post-oxidation annealing recipe was developed. The interface trap density (D_it) is extracted by the C-Ψ_S method close to conduction band edge. The performance of the POCl₃-treated oxide has been analyzed based on current density-electric field (J-E) measurements. A comprehensive and practical 4H-SiC power VDMOSFET manufacturing traveler has been designed. The power MOSFET that was fabricated based on this traveler exhibits less than half of the on-resistance and shows improved interface characteristics compared to a similarly designed commercial power MOSFET.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

559-564

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.559

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Online since:

July 2020

Authors:

Yanrui Ju*, Didier Bouvet, Roger Stark, Judith Woerle, Ulrike Grossner

Keywords:

4H-SiC Power VDMOSFET, Device Characterization, Device Processing, POCl₃ Post Oxidation Annealing

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References

[1] T. Kimoto and J. A. Cooper, Fundamentals of Silicon Carbide Technology., John Wiley & Sons, Singapore, 2014, p.212–248.

Google Scholar

[2] Okamoto, Dai, Hiroshi Yano, Kenji Hirata, Tomoaki Hatayama, and Takashi Fuyuki. Improved inversion channel mobility in 4H-SiC MOSFETs on Si face utilizing phosphorus-doped gate oxide., IEEE Electron Device Letters 31, no. 7 (2010): 710-712.

DOI: 10.1109/led.2010.2047239

Google Scholar

[3] Jiao, C., A. C. Ahyi, C. Xu, D. Morisette, L. C. Feldman, and S. Dhar. Phospho-silicate glass gated 4H-SiC metal-oxide-semiconductor devices: Phosphorus concentration dependence., Journal of Applied Physics 119, no. 15 (2016): 155705.

DOI: 10.1063/1.4947117

Google Scholar

[4] Takafumi Okuda, Takafumi, Takuma Kobayashi, Tsunenobu Kimoto, and Jun Suda. Surface passivation on 4H-SiC epitaxial layers by SiO2 with POCl3 annealing., Applied Physics Express 9, no. 5 (2016): 051301.

DOI: 10.7567/apex.9.051301

Google Scholar

[5] Yoshioka, Hironori, Takashi Nakamura, and Tsunenobu Kimoto. Accurate evaluation of interface state density in SiC metal-oxide-semiconductor structures using surface potential based on depletion capacitance., Journal of Applied Physics 111, no. 1 (2012): 014502.

DOI: 10.1063/1.3673572

Google Scholar

[6] Dieter K. Schroder, Semiconductor Material and Device Characterization., John Wiley & Sons, Singapore, 2015, PP. 319-389.

Google Scholar

[7] Janson, M. S., Margareta K. Linnarsson, A. Hallén, and B. G. Svensson. Ion implantation range distributions in silicon carbide., Journal of applied physics 93, no. 11 (2003): 8903-8909.

DOI: 10.1063/1.1569666

Google Scholar

[8] Information on https://www.wolfspeed.com/media/downloads/167/C2M0080120D.pdf.

Google Scholar