Wafer-Level near Zero Field Spin Dependent Charge Pumping: Effects of Nitrogen on 4H-SiC MOSFETs

Abstract:

In this work, we describe a new way to measure spin dependent charge capture events at MOSFET interfaces called near-zero-field spin dependent charge pumping (NZF SDCP) which yields similar information as conventional electron paramagnetic resonance. We find that NO anneals have a significant effect on the spectra obtained from 4H-SiC MOSFETs. We also likely resolve hyperfine interactions which are important for defect identification. Finally, we fully integrate a NZF SDCP measurement system into a wafer prober for high throughput applications.

• Periodical: Materials Science Forum (Volume 1004)
• Pages: 573-580
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.1004.573
• Online since: July 2020
• Authors: Mark A. Anders*, Patrick M. Lenahan, Jason T. Ryan
• Keywords: Defects, Near Zero Field Spin Dependent Charge Pumping, NO Anneal

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