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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Graphene Quality Assessment Using an Entropy...

Graphene Quality Assessment Using an Entropy Approach of SEM Images

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Abstract:

In this work a new approach of analyzing epitaxial graphene layers on semi-insulating SiC through the gray-scale entropy of SEM images as a measure for the graphene inhomogeneity is demonstrated. Raman spectroscopy as a versatile and the standard tool for graphene characterization allows additionally the determination of the layer properties such as layer count, Fermi level, defect concentration and strain. It is shown that the gray-scale entropy correlates with the defect density derived from Raman measurements and thus can be used as an additional characterization technique with much higher resolution than the conventional Raman spectroscopy allows. As a consequence, the results are used to reflect the two-stepped growth itself and to conclude for advantageous growth conditions.

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Periodical:

Materials Science Forum (Volume 1004)

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525-530

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.525

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July 2020

Authors:

Bernd Hähnlein, Sergey P. Lebedev, Ilya A. Eliseyev, Valery Yu. Davydov, Alexander A. Lebedev, Joerg Pezoldt*

Keywords:

Entropy, Epitaxial Growth, Graphene, SEM Analysis

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© 2020 Trans Tech Publications Ltd. All Rights Reserved

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