Paper Titles

Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test
p.472

Evolution of SiO_x Shell Layers on SiC-SiO_x Core-Shell Nanowires
p.479

Nano- and Micro-Scale Simulations of Ge/3C-SiC and Ge/4H-SiC NN-Heterojunction Diodes
p.490

Defects Characterization of GaN Substrate with Hot Implant Process
p.497

Structural Characterization of a Ga₂O₃Epitaxial Layer Grown on a Sapphire Substrate Using Cross-Sectional and Plan-View TEM/STEM Analysis
p.505

AFM Observation of Etch-Pit Shapes on β-Ga₂O₃ (001) Surface Formed by Molten Alkali Etching
p.512

Dislocation Vector Analysis Method of Deep Dislocation Having C-Axis Segment in Diamond
p.519

Graphene Quality Assessment Using an Entropy Approach of SEM Images
p.525

Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiC
p.535

HomeMaterials Science ForumMaterials Science Forum Vol. 1004Structural Characterization of a Ga2O3 Epitaxial...

Structural Characterization of a Ga₂O₃Epitaxial Layer Grown on a Sapphire Substrate Using Cross-Sectional and Plan-View TEM/STEM Analysis

Article Preview

Abstract:

Ga₂O₃ is a hopeful wide-band-gap semiconductor material for a next-generation power semiconductor. We performed crystal structure analysis on Ga₂O₃ film on sapphire substrate using cross-sectional transmission electron microscope (TEM) and atomic resolution plan-view scanning transmission electron microscopy (STEM). The TEM analysis suggested that the main Ga₂O₃ film is composed of κ-Ga₂O₃ or mixed crystal of κ-Ga₂O₃ and ε-Ga₂O₃. But, it is difficult to distinguish these two possibilities only by cross-sectional TEM. Contrast modulation of Ga atomic columns in the atomic resolution HAADF-STEM image showed that the main part of the Ga₂O₃ film was κ-Ga₂O₃ monolayer grown along the c-axis direction, and twins are formed.

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2019

Info:

Periodical:

Materials Science Forum (Volume 1004)

Pages:

505-511

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.505

Citation:

Cite this paper

Online since:

July 2020

Authors:

Ai Hashimoto*, Hideki Sako, Junichiro Sameshima, Masayuki Nakamura, Takayuki Kobayashi, Shinichi Motoyama, Yuji Otsuka

Keywords:

Crystal Structure, STEM, TEM, ε- Ga₂O₃, κ- Ga₂O₃

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2020 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] D. Go, Z. Wu, P. Li, H. Liu, X, Guo, H. Yan, G. Wang, C. Sun, L. Li and W. Tang, Opt. Mater. Express, 4(5), 1067-1076 (2014).

[2] H. He, R. Orlando, M. A. Blanco and R. Pandey, Phys. Rev. B 74, 195123 (2006).

[3] M. Orota, H. Ohta and M. Hirano, Appl. Phys. Lett., 77(25), 4166 (2000).

[4] H. H. Tippins, Phys. Rev. 140, A316-A319 (1965).

[5] J. Kim, D. Tahara, Y. Miura and B. G. Kim, Appl. Phys. Express, 11, 061101 (2018).

[6] M. Oda, R. Tokuda, H. Kambara, T. Tanikawa, T. Sasaki and T. Hitora, Appl. Phys. Express,9, 021101(2016).

DOI: 10.7567/apex.9.021101

[7] M. Higasguwaki, K. Sasaki, A. Kuramata, T. Masui and S. Yamakoshi, Appl. Phys. Lett., 100, 013504 (2013).

[8] M. Higasguwaki, K. Sasaki, T. Kamimura, M. H. Wong, D. Krishnamurthy, A. Kuramata, T. Masui and S. Yamakoshi, Appl. Phys. Lett., 103, 123511 (2013).

[9] F. Mezzadri, G. Calestani, F. Boschi, D. Delmonte, M. Bosi and R. Fornari, Inorg. Chem. 55, 12079-12084 (2016).

DOI: 10.1021/acs.inorgchem.6b02244

[10] Y. Yao, L. A. M. Lyle, J. A. Rokholt, S. Okur, G. S. Tompa, T. Salagaj, N. Sbrockey, R. F. Davis, and L. M. Poter, ECS Trans. 80(7), 191-196 (2017).

DOI: 10.1149/08007.0191ecst

[11] H. Y. Playford, A. C. Hannon, E. R. Barney and R. I. Walton, Chem. Eur. J. 19, 2803–2813(2013).

[12] M. Kracht, A. Karg, J. Schörmann, M. Weinhold, D. Zink, F. Michel, M. Rohnke, M. Schowalter, B. Gerken, A. Rosenauer, P. J. Klar, J. Janek, and M. Eickhoff1, Phys. Rev. Appl. 8, 054002 (2017).

DOI: 10.1103/physrevapplied.8.054002

[13] I. Cora, F. Mezzadri, F. Boschi, M. Bosi, M. Čaplovičová, G. Calestani, I. Dódony,B. Pécz, R. Fornari, Cryst. Eng. Comm. 19, 1509 (2017).

DOI: 10.1039/c7ce00123a

[14] V. Gottschalch, S. Merker, S. Blaurock, M. Kneiß, U. Teschner, M. Grundmann and H. Krautscheid, J. Cryst. Growth. 510, 76-84. (2019).

DOI: 10.1016/j.jcrysgro.2019.01.018

[15] S. J. Pearton, J. Yang, P. H. Cary IV, F. Ren, J. Kim, M. J. Tadjer and M. A. Mastro, Appl. Phys. Rev. 5, 011301 (2018).

[16] Y. Oshima, K. Kawara, T. Shinohe, T. Hitora, M. Kasu and S. Fujita, APL Mater. 7, 022503 (2019).

DOI: 10.1063/1.5051058