Optimal Design of Large Signal and Noise Performance of GaN/SiC Hetero-Structural IMPATT Diodes Based on QCDD Model

Jun Ding Zheng; Wen Sheng Wei; Wei Bo Yang; Chang Li

doi:10.4028/www.scientific.net/MSF.1014.68

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HomeMaterials Science ForumMaterials Science Forum Vol. 1014Optimal Design of Large Signal and Noise...

Optimal Design of Large Signal and Noise Performance of GaN/SiC Hetero-Structural IMPATT Diodes Based on QCDD Model

Abstract:

Successes of GaN and SiC electronics in high frequency, large power realm indicate that, the GaN/SiC hetero-structures can be used to design the impact avalanche transit time (IMPATT) diodes operating at Terahertz range, of which holds advantages over homo-structural counterparts in lower noise and reduced tunnel current. Here, the (n)GaN/(p)SiC and (p)GaN/(n)SiC double drift region (DDR) IMPATT diodes operating at 0.85 THz are proposed based on the quantum corrected drift-diffusion (QCDD) model, the performance parameters of static state, large signal and noise properties of the studied devices such as peak electric field intensity, breakdown voltage, optimal negative conductance, output power, conversion efficiency, admittance-frequency relation, quality factor, noise electric field, mean-square noise voltage per band-width and noise measure were numerically calculated and analyzed, which can guide to optimize the GaN/SiC IMPATT diodes.

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Periodical:

Materials Science Forum (Volume 1014)

Pages:

68-74

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1014.68

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Online since:

November 2020

Authors:

Jun Ding Zheng, Wen Sheng Wei*, Wei Bo Yang, Chang Li

Keywords:

GaN/SiC Hetero-Structure, IMPATT Diode, Large Signal, Noise, Quantum Corrected Drift-Diffusion Model

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* - Corresponding Author

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