Paper Titles
High Temperature Annealing SP-AlN Ameliorates the Crystal Quality ofAl0.5Ga0.5N Regrowth
p.14
Epitaxial Growth of “Strain-Free” Indium Oxide Films on (111) Yttria-Stabilized Zirconia by Metal-Organic Chemical Vapor Deposition
p.22
Investigation of Solution-Processed Ga2O3 Thin Films and their Application in Dielectric Materials
p.27
The Influence of Tri-Defects of Epitaxial Layers on the Performance of 4H-Sic Diodes
p.33
Study on the Synthesis of SiC Powder Material by Using Induction Heating System
p.38
Low Surface Roughness GaAs/Si Thin-Film Deposition Using Three-Step Growth Method in MBE
p.43
Characteristics and Drive Design Analysis of SiC
p.55
SiC Trenched Schottky Diode with Step-Shaped Junction Barrier for Superior Static Performance and Large Design Window
p.62
Optimal Design of Large Signal and Noise Performance of GaN/SiC Hetero-Structural IMPATT Diodes Based on QCDD Model
p.68

Study on the Synthesis of SiC Powder Material by Using Induction Heating System

Article Preview

Abstract:

By using a NAURA Advanced Physical Vapor Transport (PVT) System, the character ofthe synthesized SiC powder were studied. Mainly from the aspects of purity and particle size, and relevant experiments were designed to understand the influence of the powder source on the synthesized SiC powder. The results showed that the selection of Si powder source with appropriate particle size was conducive to increase the proportion of large particle size of SiC powder. In addition, the purification of material source in the early stage of the process was beneficial to improve the purity of SiC powder. The results showed successful preparation of optimized SiC powder and thus high-quality SiC wafers were made.

You might also be interested in these eBooks
Materials for Electronics: Silicon Carbide and Related Materials View Preview

Info:

Periodical:

Materials Science Forum (Volume 1014)

Pages:

38-42

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1014.38

Citation:

Cite this paper

Online since:

November 2020

Authors:

Fang Jiao*, Zhou Li Wu, Dian Peng Cui, Mu Long Yang, Bo Yu Dong

Keywords:

Grain Size, PVT System, SiC Powder, Synthesis

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2020 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

References

[1] J.B. Casady, R.W. Johnson, Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review, Solid State Electron., 39 (1996) 1409-1422.

DOI: 10.1016/0038-1101(96)00045-7

Google Scholar

[2] P.J. Wellmann, Review of SiC crystal growth technology, Semicond. Sci. Technol., 33 (2018) 103001 (21pp).

DOI: 10.1088/1361-6641/aad831

Google Scholar

[3] H.P. Martin, R. Ecke, E. Müller, Synthesis of nanocrystalline silicon carbide powder by carbothermal reduction, J. Eur. Ceram. Soc., 18 (1998) 1737-1742.

DOI: 10.1016/s0955-2219(98)00094-6

Google Scholar

[4] Y.J. Lin, C.M. Chuang, The effects of transition metals on carbothermal synthesis of β-SiC powder, Ceram. Int., 33 (2007) 779-784.

DOI: 10.1016/j.ceramint.2006.01.010

Google Scholar

[5] A. Najafi, F.G. Fard, H.R. Rezaie, N. Ehsani, Synthesis and characterization of SiC nano powder with low residual carbon processed by sol-gel method, Powder Technol., 219 (2012) 202-210.

DOI: 10.1016/j.powtec.2011.12.045

Google Scholar

[6] A. Gupta, T. Ghosh, C. Jacob, The influence of diluent gas composition and temperature on SiC nanopowder formation by CVD, J. Mater. Sci., 42 (2007) 5142-5146.

DOI: 10.1007/s10853-006-1267-1

Google Scholar

[7] H. Cui, B.R. Stoner, Nucleation and growth of silicon nitride nanoneedles using microwave plasma heating, J. Mater. Res. 16 (2001) 3111-3115.

DOI: 10.1557/jmr.2001.0429

Google Scholar

[8] Z.Z. Wang, Z.L. Wu, M.M. Ge, H.Q. Bao, Z.F. Ma, J. Wu, Study on carbon particle inclusions during 4H-SiC growth by using physical vapor transport system, Mater. Sci. Forum, 954 (2019) 46-50.

DOI: 10.4028/www.scientific.net/msf.954.46

Google Scholar

[9] X.W. Tian, Y.M. Wang, X.R. Hou, K.L. Mao, High purity silicon carbide powder synthesis at different temperatures, Electron. Process Technol., 33 (2012) 182.

Google Scholar

[10] L.H. Wang, Y. Peng, X.B. Hu, X.G. Xu, Combustion synthesis of high purity SiC powder by radio-frequency heating, Ceram. Int., 39 (2013) 6867-6875.

DOI: 10.1016/j.ceramint.2013.02.021

Google Scholar