High Temperature Annealing SP-AlN Ameliorates the Crystal Quality ofAl_0.5Ga_0.5N Regrowth

Abstract:

In this study, the effect of a high-temperature annealing process on AlN is investigated. The high-temperature annealing process reduces the screw dislocation density of the AlN film to 2.1x10⁷ cm^-2. The AlN surface is highly flat. Through HRXRD and Raman spectroscopy, the stress mode changes in the sputtered AlN film before and after high-temperature annealing were studied in depth. Based on the HTA-AlN template, a high-quality, high-Al composition AlGaN epitaxial wafer, with a (0002) plane rocking curve FWHM of 246 arcsec , was prepared at 1080°C The growth mode of AlGaN grown directly on the AlN template at low temperature is summarized.

• Periodical: Materials Science Forum (Volume 1014)
• Pages: 14-21
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.1014.14
• Online since: November 2020
• Authors: Wen Kai Yue*, Zhi Min Li, Xiao Wei Zhou, Jin Xing Wu, Pei Xian Li
• Keywords: Crystal Morphology, Nitrides, Semiconducting Aluminium Compounds

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