Elimination of Silicon Droplets Formation during 4H-SiC Epitaxial Growth by Chloride-Based CVD in a Vertical Hot-Wall Reactor

Chuan Gang Li; Tao Ju; Li Guo Zhang; Xiang Kan; Xuan Zhang; Juan Qin; Bao Shun Zhang; Ze Hong Zhang

doi:10.4028/www.scientific.net/MSF.1014.3

Paper Titles

Elimination of Silicon Droplets Formation during 4H-SiC Epitaxial Growth by Chloride-Based CVD in a Vertical Hot-Wall Reactor
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High Temperature Annealing SP-AlN Ameliorates the Crystal Quality ofAl_0.5Ga_0.5N Regrowth
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Epitaxial Growth of “Strain-Free” Indium Oxide Films on (111) Yttria-Stabilized Zirconia by Metal-Organic Chemical Vapor Deposition
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Investigation of Solution-Processed Ga₂O₃ Thin Films and their Application in Dielectric Materials
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The Influence of Tri-Defects of Epitaxial Layers on the Performance of 4H-Sic Diodes
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HomeMaterials Science ForumMaterials Science Forum Vol. 1014Elimination of Silicon Droplets Formation during...

Elimination of Silicon Droplets Formation during 4H-SiC Epitaxial Growth by Chloride-Based CVD in a Vertical Hot-Wall Reactor

Abstract:

The growth pits formed during 5-10 μm 4H-SiC epitaxial growth by a home-built vertical hot-wall CVD reactor are investigated and their formation mechanisms are discussed. The origin of the growth pits is believed to be the silicon droplets related to the unoptimized growth condition. The growth pits are successfully removed by adding more HCl to the in-situ etching stage and the after-growth cooling stage.

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Materials Science Forum (Volume 1014)

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3-7

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https://doi.org/10.4028/www.scientific.net/MSF.1014.3

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Online since:

November 2020

Authors:

Chuan Gang Li, Tao Ju, Li Guo Zhang, Xiang Kan, Xuan Zhang*, Juan Qin, Bao Shun Zhang, Ze Hong Zhang

Keywords:

4H-SiC, Epitaxial Growth, Growth Pits, In-Situ Etching, Silicon Droplets

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